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Manufacturing method of semiconductor device comprising steps of forming oxide semiconductor film, performing heat treatment on the oxide semiconductor film, and performing oxygen doping treatment on the oxide semiconductor film after the heat treatment

机译：半导体器件的制造方法，包括以下步骤：形成氧化物半导体膜;在氧化物半导体膜上进行热处理;以及在热处理之后对氧化物半导体膜进行氧掺杂处理。

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摘要

A semiconductor device using an oxide semiconductor, with stable electric characteristics and high reliability. In a process for manufacturing a bottom-gate transistor including an oxide semiconductor film, dehydration or dehydrogenation is performed by heat treatment and oxygen doping treatment is performed. The transistor including the oxide semiconductor film subjected to the dehydration or dehydrogenation by the heat treatment and the oxygen doping treatment is a transistor having high reliability in which the amount of change in threshold voltage of the transistor by the bias-temperature stress test (BT test) can be reduced.

机译：使用氧化物半导体的半导体器件，具有稳定的电特性和高可靠性。在制造包括氧化物半导体膜的底栅晶体管的工艺中，通过热处理进行脱水或脱氢，并且进行氧掺杂处理。包括通过热处理和氧掺杂处理而经受了脱水或脱氢的氧化物半导体膜的晶体管是具有高可靠性的晶体管，其中通过偏置温度应力测试（BT测试）使晶体管的阈值电压的变化量）可以减少。

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公开/公告号US8828811B2

专利类型
公开/公告日2014-09-09

原文格式PDF
申请/专利权人 SHUNPEI YAMAZAKI;
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申请/专利号US201113091181
发明设计人 SHUNPEI YAMAZAKI;
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申请日2011-04-21
分类号H01L21/84;H01L29/786;H01L29/417;H01L29/66;H01L29/49;H01L29/45;
国家 US
入库时间 2022-08-21 16:01:50

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