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首页> 外文期刊>Japanese Journal of Applied Physics. Part 1, Regular Papers, Brief Communications & Review Papers >Optical Gain and Co-Stimulated Emissions of Photons and Phonons in Indirect Bandgap Semiconductors
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Optical Gain and Co-Stimulated Emissions of Photons and Phonons in Indirect Bandgap Semiconductors

机译:间接带隙半导体中光子和声子的光增益和共刺激发射

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摘要

A model calculation on optical gain and co-stimulated emission of photons and phonons in indirect bandgap semiconductors such as silicon is presented. An analytical expression for optical gain via phonon-assisted optical transitions in indirect bandgap semiconductors is presented. Population inversion can occur when the difference between the quasi-Fermi levels for electrons and holes is greater than the photon energy. The rate equations and their steady state solutions for electron, photon, and phonon involved in the phonon-assisted optical transitions are presented. It is shown that co-stimulated emissions of photons and phonons will occur when the threshold condition for laser oscillation is satisfied. The magnitude of optical gain in bulk crystalline silicon is calculated and shown to be smaller than the free carrier absorption at room temperature. However, it is shown, for the first time, that the optical gain is greater than the free carrier absorption in bulk crystalline silicon at the temperature below 23 K. Thus, the calculation predicts that the co-stimulated emissions of photons and phonons could take place in bulk crystalline silicon at the low temperature.
机译:提出了一种对诸如硅之类的间接带隙半导体中光子和声子的光增益和共刺激发射的模型计算。提出了一种在间接带隙半导体中通过声子辅助光学跃迁进行光学增益的解析表达式。当电子和空穴的准费米能级之差大于光子能量时,就会发生种群反转。提出了参与声子辅助光学跃迁的电子,光子和声子的速率方程及其稳态解。结果表明,当满足激光振荡的阈值条件时,会发生光子和声子的共同受激发射。计算出块状晶体硅中的光学增益的大小,并显示其小于室温下自由载流子的吸收。但是,这首次表明,在低于23 K的温度下,光学增益大于块状晶体硅中的自由载流子吸收。因此,该计算预测,光子和声子的共同受激发射可以吸收放置在低温下的块状晶体硅中。

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