• 主题
高级搜索  >
历史搜索 清空历史
首页> 外文期刊>Optical and quantum electronics >Optical gain by simultaneous photon and phonon confinement in indirect bandgap semiconductor acousto-optical cavities
【24h】

Optical gain by simultaneous photon and phonon confinement in indirect bandgap semiconductor acousto-optical cavities

机译：间接带隙半导体声光腔中同时受光子和声子限制的光学增益

获取原文
获取原文并翻译 | 示例
           
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

Optical gain that could ultimately lead to light emission from silicon is a goal that has been pursued for a long time by the scientific community. The reason is that a silicon laser would allow for the development of low-cost, high-volume monolithic photonic integrated circuits created using conventional CMOS technologies. However, the silicon indirect bandgap-requiring the participation of a proper phonon in the process of light emission-is a roadblock that has not been overcome so far. A high-Q optical cavity allowing a very high density of states at the desired frequencies has been proposed as a possible way to get optical gain. However, recent theoretical studies have shown that the free-carrier absorption is much higher than the optical gain at ambient temperature in an indirect bandgap semiconductor, even if a high-Q optical cavity is formed. In this work, we consider a particular case in which the semiconductor material is engineered to form an acousto-optical cavity where the photon and phonon modes involved in the emission process are simultaneously confined. The acousto-optical cavity confinement effect on the light emission properties is characterized by a compound Purcell factor which includes both the optical as well as the acoustic Purcell factor (APF). A theoretical expression for the APF is also introduced. Our theoretical results suggest that creating an acousto-optical cavity the optical gain can overcome the photon loss due to free carriers as a consequence of the localization of phonons even at room temperature, paving the way towards the pursued silicon laser.
机译：最终可能导致硅发光的光学增益是科学界长期追求的目标。原因是硅激光器将允许开发使用常规CMOS技术创建的低成本，大批量单片光子集成电路。但是，硅的间接带隙（需要一个适当的声子参与发光过程）是目前尚未克服的障碍。已经提出了允许在所需频率上具有非常高的状态密度的高Q光学腔，作为获得光学增益的一种可能方法。但是，最近的理论研究表明，即使形成了高Q光腔，在间接带隙半导体中，自由载流子的吸收也要比环境温度下的光增益高得多。在这项工作中，我们考虑一种特殊情况，其中将半导体材料设计为形成声光腔，同时限制发射过程中涉及的光子和声子模。声光腔对发光特性的限制作用的特征在于复合的珀塞尔系数（Purcell factor），该系数既包括光学珀耳塞尔系数也包括声学珀塞尔系数（APF）。还介绍了APF的理论表达式。我们的理论结果表明，即使在室温下，通过创建声光腔，光学增益也可以克服由于自由载流子而造成的光子损失，这些自由载流子是声子定位在室温下的结果，从而为追求的硅激光器铺平了道路。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号