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首页> 外文期刊>Japanese Journal of Applied Physics. Part 1, Regular Papers, Brief Communications & Review Papers >Kinetic Model of Si Oxidation at HfO_2/Si Interface with Post Deposition Annealing
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Kinetic Model of Si Oxidation at HfO_2/Si Interface with Post Deposition Annealing

机译：后沉积退火的HfO_2 / Si界面Si氧化动力学模型

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摘要

The oxidation mechanism at the HfO_2/Si interface is discussed by investigating oxidation kinetics on the basis of experimental results that were obtained using the technique of grazing incidence X-ray reflectivity (GIXR) in combination with spectroscopic ellipsometry (SE) measurements. In a relatively thick HfO_2 region, the interface layer growth shows a logarithmic dependence on annealing time, while the activation energy of oxidation is very small compared with that of conventional oxidation. These results clearly indicate that the oxidation mechanism at the HfO_2/Si interface is different from that at the Si surface. Moreover, it is also reported that the oxidation at the HfO_2/Si interface has no surface orientation dependence, no HfO_2 thickness dependence and a slight O_2 pressure dependence. All of the results obtained in this work suggest that atomic oxygen is involved in the oxidation at the HfO_2/Si interface and the diffusion of oxygen atoms in the interface layer limits oxidation rate in a relatively thick HfO_2 region. On the other hand, in an ultra-thin HfO_2 region, HfO_2 thickness dependence and Si surface orientation dependence are observed. These results suggest that both atomic oxygen and molecular oxygen are involved in the interface oxidation in an ultra-thin HfO_2 region. On the basis of the results, we propose a kinetic model for the oxidation associated with both atomic oxygen and molecular oxygen at the HfO_2/Si interface.
机译：在实验结果的基础上，通过研究氧化动力学，讨论了HfO_2 / Si界面处的氧化机理，该实验结果是使用掠入射X射线反射率（GIXR）技术结合椭圆偏振光谱（SE）测量获得的。在相对较厚的HfO_2区域，界面层的生长对退火时间呈对数依赖性，而与常规氧化相比，氧化的活化能非常小。这些结果清楚地表明，HfO_2 / Si界面的氧化机理与Si表面的氧化机理不同。此外，还报道了在HfO_2 / Si界面处的氧化不具有表面取向依赖性，不具有HfO_2厚度依赖性并且具有轻微的O_2压力依赖性。在这项工作中获得的所有结果表明，原子氧参与了HfO_2 / Si界面的氧化，并且界面层中氧原子的扩散限制了相对较厚的HfO_2区域的氧化速率。另一方面，在超薄的HfO_2区域中，观察到HfO_2的厚度依赖性和Si表面取向依赖性。这些结果表明，原子氧和分子氧都参与了超薄HfO_2区域的界面氧化。根据结果​​，我们提出了一种在HfO_2 / Si界面上与原子氧和分子氧相关的氧化的动力学模型。

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