...
  • 主题
高级搜索  >
历史搜索 清空历史
首页> 外文期刊>Japanese Journal of Applied Physics. Part 1, Regular Papers, Brief Communications & Review Papers >Thickness Dependence of Current Conduction and Carrier Distribution of GaAsN Grown on GaAs
【24h】

Thickness Dependence of Current Conduction and Carrier Distribution of GaAsN Grown on GaAs

机译：GaAs上生长的GaAsN的电流密度和载流子的厚度依赖性

获取原文
获取原文并翻译 | 示例
           
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

Thickness dependence of the properties of GaAsN grown on GaAs was investigated by characterizing GaAs/GaAs_(0.982)N_(0.018)/ GaAs Schottky diodes by current-voltage (I-V), capacitance-voltage (C-V) profiling and deep-level transient spectroscopy (DLTS). I-V characteristics show a considerable increase in the saturation current when the GaAsN thickness is increased from 60 to 250 A. As GaAsN thickness is increased further, the I-V characteristic deviates from that of a normal Schottky diode with a large series resistance. These I-V characteristics correlate well with carrier distribution. In thick GaAsN samples, C-V profiling shows carrier depletion in the top GaAs layer and frequency-dispersion accumulation in the GaAsN layer. DLTS spectra show that the carrier depletion in the top GaAs layer is due to an EL2 trap and the frequency-dispersion accumulation is due to the removal of electrons from a trap at 0.35 eV in the GaAsN layer. Increasing the GaAsN thickness markedly increases the magnitude of both traps. The large series resistance in thick GaAsN samples is due to EL2 that markedly depletes the top GaAs layer.
机译：通过利用电流-电压（IV），电容-电压（CV）分布图和深层瞬态光谱分析表征GaAs / GaAs_（0.982）N_（0.018）/ GaAs肖特基二极管，研究了生长在GaAs上的GaAsN的性质对厚度的依赖性。 DLTS）。当GaAsN的厚度从60 A增加到250 A时，I-V特性显示出饱和电流的显着增加。随着GaAsN厚度的进一步增加，I-V特性会偏离具有大串联电阻的普通肖特基二极管。这些I-V特性与载流子分布密切相关。在厚的GaAsN样品中，C-V曲线显示出顶层GaAs层中的载流子耗尽和GaAsN层中的频散积累。 DLTS光谱表明，顶部GaAs层中的载流子耗尽是由于EL2陷阱引起的，而频散累积是由于GaAsN层中的电子在0.35 eV时从陷阱中去除了电子。 GaAsN厚度的增加明显增加了两个陷阱的幅度。厚GaAsN样品中的大串联电阻是由于EL2显着耗尽了顶部GaAs层。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号