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首页> 外文期刊>Japanese Journal of Applied Physics. Part 1, Regular Papers, Brief Communications & Review Papers >ArF Photoresist Parameter Optimization for Mask Error Enhancement Factor Reduction
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ArF Photoresist Parameter Optimization for Mask Error Enhancement Factor Reduction

机译：ArF光刻胶参数优化，可降低掩模误差

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The mask error enhancement factor (MEEF) is the best representative index for critical dimension (CD) variation in a wafer which is amplified by real specific mask CD variation. As already clarified in previous reports, MEEF is increased by reducing k_1 (process ability index) or pattern pitch. The illumination system, just like lens aberration or stage defocus effects directly the MEEF value, but the leveling or species of a substrate and the resist performance are also strongly related to the MEEF value. In practice, when engineers set up the photoprocess for fabricating the miniaturized structures of current devices, they established minimum shot uniformity target such as the MEEF value within wafer uniformity and wafer-to-wafer uniformity, in addition to the usable depth of focus (UDOF) or exposure latitude (EL) margin. We examined MEEF reduction by checking the differences in resist parameters and attempted to correlate the results between experiment and simulation. Solid-C was used as the simulation tool. The target node is dense line/space pattern (L/S) of sub-80 nm and we used the same illumination conditions. We calculated MEEF values by comparing with the original mask uniformity using the optical parameters of each resist type. The normalized image log slope (NILS) showed us some points of the saturation value with pupil mesh points and the aberration is not considered. We used four different types of resist and changed resist optical properties (i.e., n, k refractive index; A, B, and C Dill exposure parameters). It is very difficult to measure the kinetic phenomenon, thus we chose the Fickian model in post exposure bake (PEB) and the Weiss model for development. In this paper, we suggest another direction of photoresist improvement by comparing the resist parameters with the MEEF values at different pitches.
机译：掩模误差增强因子（MEEF）是晶片中关键尺寸（CD）变化的最佳代表指标，该误差通过实际的特定掩模CD变化进行放大。如先前报告中已阐明的那样，通过减小k_1（过程能力指数）或图案间距来提高MEEF。就像透镜像差或镜台散焦一样，照明系统直接影响MEEF值，但是基板的水平度或种类以及抗蚀剂性能也与MEEF值密切相关。在实践中，当工程师为制造当前设备的微型结构而设置光工艺时，除了可用焦深（UDOF）之外，他们还建立了最小的压射均匀性目标，例如晶圆均匀性和晶圆间均匀性内的MEEF值）或曝光纬度（EL）边距。我们通过检查抗蚀剂参数的差异检查了MEEF降低情况，并尝试将实验结果与模拟结果进行关联。使用Solid-C作为模拟工具。目标节点是80 nm以下的密集线/空间图案（L / S），我们使用了相同的照明条件。我们通过使用每种抗蚀剂类型的光学参数与原始掩模均匀度进行比较，计算出MEEF值。归一化图像对数斜率（NILS）向我们显示了饱和度值的一些点和瞳孔网格点，并且未考虑像差。我们使用了四种不同类型的抗蚀剂并更改了抗蚀剂的光学特性（即n，k折射率； A，B和C Dill曝光参数）。测量动力学现象非常困难，因此我们选择了曝光后烘烤（PEB）中的Fickian模型和W​​eiss模型进行开发。在本文中，我们通过将抗蚀剂参数与不同节距下的MEEF值进行比较，提出了光致抗蚀剂改进的另一个方向。

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