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首页> 外文期刊>Japanese Journal of Applied Physics. Part 1, Regular Papers, Brief Communications & Review Papers >Effect of Indium on Photoluminescence Properties of InGaPN Layers Grown by Solid Source Molecular Beam Epitaxy
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Effect of Indium on Photoluminescence Properties of InGaPN Layers Grown by Solid Source Molecular Beam Epitaxy

机译：铟对固体源分子束外延生长的InGaPN层的光致发光性能的影响

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摘要

The effect of indium on photoluminescence properties of InGaPN layers was investigated and compared with that of GaPN layers. Two phenomena involving photoluminescence properties were observed in the InGaPN layers: (ⅰ) an S-shape of photoluminescence (PL) peak energy as a function of temperature, caused by spatial fluctuation of bandgap energy related to In and N content; and (ⅱ) red shifts of the PL peak energy at 18 K in the InGaPN layers after rapid thermal annealing (RTA), caused by the increase of N- and In-rich region with increasing RTA temperature. It was also found that integrated PL intensity in the InGaPN layers was higher than that in the GaPN layers, and that PL quenching became more insensitive to the change in temperature resulting from the decrease in nonradiative centers with increasing RTA temperature.
机译：研究了铟对InGaPN层的光致发光性能的影响，并将其与GaPN层的光致发光性能进行了比较。在InGaPN层中观察到两种涉及光致发光特性的现象：（ⅰ）由与In和N含量有关的带隙能量的空间波动引起的S形光致发光（PL）峰值能量随温度的变化。 （ⅱ）快速热退火（RTA）之后，InGaPN层中18 K处的PL峰值能量发生红移，这是由于N和In富集区域随RTA温度升高而增加。还发现，InGaPN层中的积分PL强度高于GaPN层中的积分PL强度，并且由于RTA温度升高，由于非辐射中心的减少，PL猝灭对温度变化变得更加不敏感。

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