Characterization of Thermally Annealed Fluorinated Silicon Dioxide Films Prepared by Liquid-Phase Deposition

Ming-Kwei Lee; Chung-Min Shih; Shu-Ming Chang; Hong-Chi Wang; Jung-Jie Huang

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Characterization of Thermally Annealed Fluorinated Silicon Dioxide Films Prepared by Liquid-Phase Deposition

机译：液相沉积制备的热退火氟化二氧化硅薄膜的表征

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Fluorinated silicon dioxide films were prepared by liquid phase deposition method using hydrosilicofluoric acid and ammonium hydroxide aqua as sources. The quality of fluorinated silicon dioxide films can be improved by N_2 thermal annealing. It is in an attempt to evaluate the feasibility of this material as a candidate for inter-metal dielectrics in ULSIs. The obtained results were the relative dielectric constant of 3.2, and the leakage current density measured at the electric field of 1.5MV/cm about 1 x 10~(-7) A/cm~2 at the annealing temperature of 350℃. It has potential for inter-metal dielectric applications.

机译：以氢氟硅酸和氢氧化铵水溶液为原料，通过液相沉积法制备了氟化二氧化硅薄膜。通过N_2热退火可以改善氟化二氧化硅膜的质量。试图评估这种材料作为ULSI中金属间电介质候选材料的可行性。所得结果为相对介电常数3.2，在350℃的退火温度下于1.5MV / cm的电场下测得的漏电流密度约为1 x 10〜（-7）A / cm〜2。它具有金属间电介质应用的潜力。

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来源
《Japanese Journal of Applied Physics. Part 2, Letters & Express Letters》 |2005年第7期|p. L220-L223|共4页
作者
Ming-Kwei Lee; Chung-Min Shih; Shu-Ming Chang; Hong-Chi Wang; Jung-Jie Huang;
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作者单位

Department of Electrical Engineering, National Sun Yat-sen University, Kaohsiung, 80424, Taiwan, R, O. C.;

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原文格式 PDF
正文语种 eng
中图分类应用物理学;
关键词
LPD; SiOF; low dielectric constant; thermal annealing;

机译：LPD;SiOF;低介电常数;热退火;

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Characterization of Thermally Annealed Fluorinated Silicon Dioxide Films Prepared by Liquid-Phase Deposition

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