High-Rate Growth of Films of Dense, Aligned Double-Walled Carbon Nanotubes Using Microwave Plasma-Enhanced Chemical Vapor Deposition

Mineo HIRAMATSU; Hidetoshi NAGAO; Masaki TANIGUCHI; Hiroshi AMANO; Yoshinori ANDO; Masaru HORI

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High-Rate Growth of Films of Dense, Aligned Double-Walled Carbon Nanotubes Using Microwave Plasma-Enhanced Chemical Vapor Deposition

机译：使用微波等离子体增强化学气相沉积法快速生长致密，对准的双壁碳纳米管薄膜

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摘要

Carbon nanotube (CNT) films were grown using microwave plasma-enhanced chemical vapor deposition. Catalytic cobalt (Co) nanoparticles were deposited on a silicon substrate using pulsed arc deposition. A titanium nitride (TiN) thin film was used as a buffer layer on the substrate in order to prevent the formation of Co silicide. A dense, vertically aligned, double-walled CNT (DWNT) film was grown rapidly on the Co-catalyzed Si substrate. The CNTs grew at an extremely high rate of 600nm/s during the first 10min of growth. Dense DWNT films with thicknesses of over 500 μm were obtained in 20min.

机译：使用微波等离子体增强化学气相沉积法生长碳纳米管（CNT）膜。使用脉冲电弧沉积将催化钴（Co）纳米颗粒沉积在硅基板上。为了防止形成硅化钴，将氮化钛（TiN）薄膜用作衬底上的缓冲层。致密，垂直排列的双壁CNT（DWNT）膜在Co催化的Si衬底上快速生长。在生长的前10分钟内，CNT以600nm / s的极高速度生长。在20分钟内获得了厚度超过500μm的致密DWNT膜。

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来源
《Japanese Journal of Applied Physics. Part 2, Letters》 |2005年第23期|p.L693-L695|共3页
作者
Mineo HIRAMATSU; Hidetoshi NAGAO; Masaki TANIGUCHI; Hiroshi AMANO; Yoshinori ANDO; Masaru HORI;
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作者单位

Nano Factory, Department of Electrical and Electronic Engineering, Meijo University, Tempaku, Nagoya 468-8502, Japan;

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原文格式 PDF
正文语种 eng
中图分类应用物理学;
关键词
carbon naotube; double-walled CNT; plasma enhanced CVD; Co catalyst; aligned; high growth rate;

机译：碳纳米管;双壁碳纳米管;等离子体增强CVD;Co催化剂;取向;高生长速率;

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专利

1. Fabrication of Dense Carbon Nanotube Films Using Microwave Plasma-Enhanced Chemical Vapor Deposition [J] . Mineo HIRAMATSU, Masaki TANIGUCHI, Hidetoshi NAGAO, Japanese Journal of Applied Physics. Part 1, Regular Papers, Brief Communications & Review Papers . 2005,第2期

机译：微波等离子体增强化学气相沉积法制备致密碳纳米管薄膜
2. Growth of Vertically Aligned Carbon Nanotubes Depending on Thickness of Catalyst Films by Plasma-Enhanced Chemical Vapor Deposition [J] . Hiroki Okuyama, Nobuyuki Iwata, Hiroshi Yamamoto Molecular crystals and liquid crystals . 2007,第0期

机译：通过等离子体增强化学气相沉积法生长垂直排列的碳纳米管取决于催化剂膜的厚度
3. Growth of vertically aligned carbon nanotubes depending on thickness of catalyst films by plasma-enhanced chemical vapor deposition [J] . Okuyama H, Iwata N, Yamamoto H Molecular crystals and liquid crystals . 2007,第0期

机译：通过等离子体增强化学气相沉积法生长垂直排列的碳纳米管，取决于催化剂膜的厚度
4. The Super-capacitor properties of Aligned Carbon nanotubes Array prepared by Radio Frequency Plasma-Enhanced Hot Filament Chemical Vapor Deposition [C] . Yiming Chen, Haiyan Zhang International Conference on Advances in Materials and Manufacturing Processes . 2011

机译：通过射频等离子体增强的热丝化学气相沉积制备的对准碳纳米管阵列的超级电容器性能
5. Numerical simulation and emission diagnostics of the gas-phase growth environment during carbon nanotube synthesis by plasma-enhanced chemical vapor deposition. [D] . Garg, Rajesh Kumar. 2006

机译：等离子体增强化学气相沉积法在碳纳米管合成过程中气相生长环境的数值模拟和排放诊断。
6. The Influences of H2Plasma Pretreatment on the Growth of Vertically Aligned Carbon Nanotubes by Microwave Plasma Chemical Vapor Deposition [O] . Sheng-Rui Jian, Yuan-Tsung Chen, Chih-Feng Wang, 2008

机译：H2等离子体预处理对微波等离子体化学气相沉积法垂直排列碳纳米管生长的影响
7. High growth rate of vertically aligned carbon nanotubes using a plasma shield in microwave plasma-enhanced chemical vapor deposition [O] . Kinoshita Hiroshi, Kume Ippei, Sakai Hirokazu, 2004

机译：使用等离子体屏蔽罩在微波等离子体增强化学气相沉积中实现垂直排列的碳纳米管的高生长速率
8. Growth of Highly-Oriented Carbon Nanotubes by Plasma-Enhanced Hot Filament Chemical Vapor Deposition; Applied Physics Letters [R] . Huang, Z. P. , Provencio, P. N. , Ren, Z. F. , 1998

机译：等离子体增强热丝化学气相沉积制备高取向碳纳米管;应用物理快报

High-Rate Growth of Films of Dense, Aligned Double-Walled Carbon Nanotubes Using Microwave Plasma-Enhanced Chemical Vapor Deposition

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