Enhancement of Blue Emission from Mg-Doped GaN Using Remote Plasma Containing Atomic Hydrogen

Yoichi KAMIURA; Masahiro KANESHIRO; Jin TAMURA; Takeshi ISHIYAMA; Yoshifumi YAMASHITA; Tomotsugu MITANI; Takashi MUKAI

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Enhancement of Blue Emission from Mg-Doped GaN Using Remote Plasma Containing Atomic Hydrogen

机译：使用远程含原子氢等离子体增强掺镁GaN的蓝光发射

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We have found for the first time that blue emission from Mg-doped GaN was greatly enhanced by remote plasma treatment (RPT) with plasma containing atomic hydrogen, in particular, water vapor plasma, at low temperatures of 300-400℃. The highest enhancing factor was twenty, achieved by water vapor RPT at 400℃ for 30 min. The enhanced blue emission was stable up to 500℃, similarly to blue emission from as-grown samples, suggesting the same origin and mechanism. We have confirmed that the emission mechanism is donor-acceptor pair (DAP) recombination, and have concluded that RPT produces a hydrogen-related donor level at E_c - 0.37 eV involved in the DAP emission.

机译：我们首次发现，在300-400℃的低温下，采用含原子氢的等离子体（特别是水蒸气等离子体）进行远程等离子体处理（RPT），可以大大提高掺Mg GaN的蓝光发射。最高的增强因子是二十，这是通过在400℃下水蒸气RPT 30分钟实现的。增强的蓝光发射在高达500℃的温度下是稳定的，类似于生长的样品的蓝光发射，表明其起源和机理相同。我们已经证实，发射机理是供体-受体对（DAP）重组，并得出结论，RPT在DAP发射中产生E_c-0.37 eV处与氢有关的供体能级。

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来源
《Japanese Journal of Applied Physics. Part 2, Letters & Express Letters》 |2005年第32期|p.L926-L928|共3页
作者
Yoichi KAMIURA; Masahiro KANESHIRO; Jin TAMURA; Takeshi ISHIYAMA; Yoshifumi YAMASHITA; Tomotsugu MITANI; Takashi MUKAI;
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作者单位

Division of Industrial Innovation Sciences, The Graduate School of Natural Science and Technology, Okayama University, 3-1-1 Tsushima-naka, Okayama 700-8530, Japan;

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正文语种 eng
中图分类应用物理学;
关键词
GaN; blue emission; photoluminescence; hydrogen; remote plasma; Mg;

机译：氮化镓;蓝光发射;光致发光;氢;远程等离子体;镁;

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1. Enhancement of blue emission from Mg-doped GaN activated at low temperature in O_2/N_2 mixture [J] . Da-Bing Li, Kazuya Nakamura, Hideto Miyake, Physica Status Solidi. C, Conferences and critical reviews . 2006,第8期

机译：O_2 / N_2混合物中低温激活的Mg掺杂GaN的蓝色发射增强
2. Atomic model for blue luminescences in Mg-doped GaN [J] . Sun-Ghil Lee, K J Chang Semiconductor Science and Technology . 1999,第2期

机译：镁掺杂GaN中蓝色发光的原子模型
3. Origin of blue-band emission from Mg-doped Al_(0.15)Ga_(0.85)N/GaN superlattices [J] . T. Y. Lin, Y. M. Sheu, Y. F. Chen Applied Physics Letters . 2006,第8期

机译：掺Mg的Al_（0.15）Ga_（0.85）N / GaN超晶格产生蓝带的起源
4. Remote plasma hydrogenation of Mg-doped GaN [C] . International conference on silicon carbide and related materials . 1996

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5. Interface Electronic State Characterization of Plasma Enhanced Atomic Layer Deposited Dielectrics on GaN. [D] . Yang, Jialing. 2014

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Enhancement of Blue Emission from Mg-Doped GaN Using Remote Plasma Containing Atomic Hydrogen

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