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首页> 外文期刊>Japanese Journal of Applied Physics. Part 1, Regular Papers & Short Notes >Temperature Dependence of Photoluminescence Lifetime and Quantum Efficiency in Neat fac-Ir(ppy)_3 Thin Films
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Temperature Dependence of Photoluminescence Lifetime and Quantum Efficiency in Neat fac-Ir(ppy)_3 Thin Films

机译：整洁的fac-Ir（ppy）_3薄膜的光致发光寿命和量子效率的温度依赖性

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摘要

Temperature dependences of lifetime and intensity of photoluminescence have been investigated in neat fac-Ir(ppy)_3 thin films, which have a nonradiative decay channel due to aggregate quenching. Both temperature dependences can be well understood by a model which consists of three substates of the triplet metal-to-ligand-charge-transfer (~3MLCT) state and a nonemissive state. Good agreement between the experimental results and the calculations based on the model suggests that nonradiative decay occurs through a higher lying excited state in fac-Ir(ppy)_3 molecules, and that the nonemissive excited state has a decay rate of 3.1 x 10~9 s~(-1) and is located at 0.12eV above the lowest substate of the ~3MLCT state.
机译：在纯的fac-Ir（ppy）_3薄膜中研究了寿命和光致发光强度的温度依赖性，该薄膜由于聚集淬灭而具有非辐射衰减通道。通过一个模型可以很好地理解这两种温度依赖性，该模型由三重态金属到配体电荷转移（〜3MLCT）状态和非发射状态的三个子状态组成。实验结果与基于模型的计算结果之间的良好一致性表明，fac-Ir（ppy）_3分子中较高的激发态会发生非辐射衰变，非激发态的衰变率为3.1 x 10〜9 s〜（-1），位于〜3MLCT状态的最低子状态之上0.12eV。

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