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首页> 外文期刊>Japanese Journal of Applied Physics. Part 1, Regular Papers & Short Notes >Simulation Method for Buried Oxide Formation of Separation by Implanted Oxygen Structure during Post-Implantation Thermal Annealing
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Simulation Method for Buried Oxide Formation of Separation by Implanted Oxygen Structure during Post-Implantation Thermal Annealing

机译：注入后热退火过程中埋入式氧结构分离氧化物的模拟形成方法

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摘要

We have developed a simulation method for buried oxide layer formation of separation by implanted oxygen (SIMOX) structures during thermal annealing after oxygen implantation into Si. The SiO_2 precipitation in oxygen-implanted Si substrates is numerically simulated, introducing the Cahn-Hilliard equation for the evolution of oxygen concentration distribution in a Si matrix. We have found that different initial depth profiles of oxygen cause different types of profiles of domain structures distinguished as a continuous oxide layer, an array of discontinuous oxide islands, and an oxide layer including Si islands. Our simulation well reproduces the SIMOX structures observed experimentally for different oxygen doses. Also, the dynamic simulation results agree well with experimental ones. These results indicate that our simulation method enables to extract the dose window for continuous oxide layer formation as well as to study the formation mechanism of the buried oxide layer of the SIMOX substrate by post-implantation thermal annealing.
机译：我们已经开发了一种模拟方法，用于在氧注入Si之后的热退火过程中，通过埋入氧（SIMOX）结构分离形成掩埋氧化物层。数值模拟了注氧硅衬底中的SiO_2析出，引入了Cahn-Hilliard方程，用于计算硅基体中氧浓度分布的变化。我们已经发现，氧气的不同初始深度轮廓导致不同类型的畴结构轮廓，这些轮廓结构被区分为连续氧化物层，不连续氧化物岛的阵列以及包括Si岛的氧化物层。我们的模拟很好地再现了在不同氧气剂量下实验观察到的SIMOX结构。动态仿真结果也与实验结果吻合良好。这些结果表明，我们的仿真方法能够提取连续氧化层形成的剂量窗口，并能够通过注入后的热退火研究SIMOX衬底的掩埋氧化层的形成机理。

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