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首页> 外文期刊>Japanese Journal of Applied Physics. Part 1, Regular Papers & Short Notes >Growth of Atomically Flat-Surface Aluminum Nitride Epitaxial Film by Metalorganic Chemical Vapor Deposition
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Growth of Atomically Flat-Surface Aluminum Nitride Epitaxial Film by Metalorganic Chemical Vapor Deposition

机译：金属有机化学气相沉积法生长原子平面氮化铝外延膜

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摘要

A high c-axis-oriented and atomically flat-surface aluminum nitride (AlN) film has been successfully deposited on a (0001)sapphire substrate by metalorganic chemical vapor deposition. We evaluated the dependences of surface roughness, tilted mosaicity and twisted mosaicity on the conditions of AlN deposition. It was found that the atomically flat-surface AlN film was deposited under the diffusion-limited area with suppression of vapor phase reaction at a substrate temperature of 1200℃ and a Ⅴ/Ⅲ ratio of 800. It was also recognized that surface roughness was controlled by gas flow velocity, which is determined by both gas flow rate and pressure in reactor. Mean surface roughness (R_a) of the deposited AlN films was approximately 1 A. The full width at half maximum of X-ray rocking curve for (0002) and (1012)AlN were approximately 100 and 2300 arcsec, respectively.
机译：通过金属有机化学气相沉积已成功地在（0001）蓝宝石衬底上沉积了高c轴取向且原子平面平坦的氮化铝（AlN）膜。我们评估了表面粗糙度，倾斜镶嵌和扭曲镶嵌对AlN沉积条件的依赖性。结果发现，在衬底温度为1200℃，Ⅴ/Ⅲ比为800的条件下，抑制了气相反应，在扩散限制区域下沉积了原子平面的AlN膜。还发现可以控制表面粗糙度气体流速取决于反应器中的气体流速和压力。所沉积的AlN膜的平均表面粗糙度（R_a）约为1A。（0002）和（1012）AlN的X射线摇摆曲线的半峰全宽分别约为100和2300弧秒。

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