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首页> 外文期刊>Japanese Journal of Applied Physics. Part 1, Regular Papers & Short Notes >Vertical Electrode GaN-Based Light-Emitting Diode Fabricated by Selective Wet Etching Technique
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Vertical Electrode GaN-Based Light-Emitting Diode Fabricated by Selective Wet Etching Technique

机译：选择性湿法刻蚀技术制备的垂直电极GaN基发光二极管

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摘要

In order to improve the device performance and productivity, a sapphire-etched vertical-electrode nitride semiconductor (SEVENS) light-emitting diode (LED) is fabricated by a selective wet-etching technique. The sapphire substrate is removed by chemical wet etching and transferred to a conducting Si substrate with a reflector metal. The SEVENS-LED exhibits excellent device performance. Integral light-output power is approximately 3.5 mW at a 20mA junction current, which indicates a 6.6% external quantum efficiency (EQE). The light-output power was linearly increased with increasing junction current, and the peak wavelength was saturated even with a higher junction current. The enhanced performance of the SEVENS-LED is attributed to changing the lateral electrode to a vertical electrode and transferring a sapphire substrate to a Si receptor with a reflector metal. The SEVENS-LED technique is anticipated to be useful for improving the performance of GaN-based LEDs for future solid-state general illumination applications.
机译：为了提高器件性能和生产率，通过选择性湿蚀刻技术制造了蓝宝石蚀刻的垂直电极氮化物半导体（SEVENS）发光二极管（LED）。蓝宝石衬底通过化学湿法刻蚀去除，并转移到带有反射金属的导电Si衬底上。 SEVENS-LED具有出色的设备性能。结电流为20mA时，积分光输出功率约为3.5 mW，这表明外部量子效率（EQE）为6.6％。随着结电流的增加，光输出功率线性增加，即使结电流更高，峰值波长也会饱和。 SEVENS-LED的增强性能归因于将侧面电极更改为垂直电极，并使用反射金属将蓝宝石衬底转移到Si接收器。预计SEVENS-LED技术可用于改善基于GaN的LED的性能，以用于未来的固态通用照明应用。

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