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首页> 外文期刊>Japanese Journal of Applied Physics. Part 1, Regular Papers, Brief Communications & Review Papers >pH and Procaine Sensing Characteristics of Extended-Gate Field-Effect Transistor Based on Indium Tin Oxide Glass
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pH and Procaine Sensing Characteristics of Extended-Gate Field-Effect Transistor Based on Indium Tin Oxide Glass

机译：基于氧化铟锡玻璃的扩展栅场效应晶体管的pH和普鲁卡因传感特性

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摘要

The pH sensing properties of an extended-gate field-effect transistor (EGFET) based on indium tin oxide (ITO) glass are investigated in this study. The separating structures in the EGFET are examined using a current-voltage measurement system to measure Ⅰ-Ⅴ curves. A readout circuit is applied to measure the pH sensing EGFET output voltage, and nonideal factors (drift and hysteresis effects) are monitored in different buffer solutions (pH = 1-11). It was found that separating structures for ITO glass sensors have a high pH sensitivity (～ 55 mV/pH), a low drift rate and a small hysteresis width in the concentration range between pH = 1 and 11 in buffer solutions. The EGFET was used in fabricating a drug-sensitive field-effect transistor (DrugFET) sensor for procaine hydrochloride. The DrugFET was prepared using a combination of the EGFET and a drug-sensitive membrane that measured the procaine concentration in the 1 x 10~(-2)-1 x 10~(-6) mol/L range. The separating structure was used with a procaine DrugFET with a good response (～200 s) at room temperature.
机译：本文研究了基于铟锡氧化物（ITO）玻璃的扩展栅场效应晶体管（EGFET）的pH传感特性。使用电流-电压测量系统检查EGFET中的分离结构，以测量Ⅰ-Ⅴ曲线。应用读出电路来测量pH感应EGFET的输出电压，并在不同的缓冲溶液（pH = 1-11）中监视非理想因素（漂移和滞后效应）。结果发现，在缓冲溶液中，在pH = 1至11的浓度范围内，用于ITO玻璃传感器的分离结构具有较高的pH敏感度（〜55 mV / pH），低漂移率和较小的滞后宽度。 EGFET用于制造盐酸普鲁卡因的药物敏感型场效应晶体管（DrugFET）传感器。使用FET和药物敏感膜的组合来制备DrugFET，该膜测量普鲁卡因浓度在1 x 10〜（-2）-1 x 10〜（-6）mol / L范围内。分离结构与普鲁卡因DrugFET一起使用，在室温下响应良好（〜200 s）。

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