Dependence of Time-Dependent Dielectric Breakdown Lifetime on NH_3-Plasma Treatment in Cu Interconnects

Junji NOGUCHI; Naofumi OHASHI; Hizuru YAMAGUCHI; Ken-ichi TAKEDA

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Dependence of Time-Dependent Dielectric Breakdown Lifetime on NH_3-Plasma Treatment in Cu Interconnects

机译：铜互连中时间相关的介电击穿寿命对NH_3-等离子处理的依赖性

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The time-dependent dielectric breakdown (TDDB) between adjacent Cu wires was investigated. TDDB lifetime strongly depends on the conditions of the chemical mechanical polishing (CMP) surface and of NH_3-plasma treatment prior to cap nitride deposition. The condition of NH_3-plasma treatment was evaluated in detail. The TDDB lifetime is strongly dependent on the substrate temperature and the duration of NH_3-plasma treatment but is independent of the pressure and power. Excessive NH_3-plasma treatment degrades the TDDB lifetime. Hillocks on the Cu surface appear abruptly as the substrale temperature rises. The optimum treatment conditions are 10-30 s for a substrate temperature of 360℃, and 10 s for a substrale temperature of 400℃.

机译：研究了相邻铜线之间随时间变化的介电击穿（TDDB）。 TDDB的寿命在很大程度上取决于化学机械抛光（CMP）表面的条件以及帽氮化物沉积之前的NH_3-等离子体处理的条件。详细评估了NH_3-血浆的治疗条件。 TDDB的寿命在很大程度上取决于底物温度和NH_3-等离子体处理的持续时间，但与压力和功率无关。过多的NH_3-等离子体处理会降低TDDB的寿命。随着基底温度的升高，铜表面的小丘突然出现。最佳处理条件是：基板温度为360℃时为10-30 s，基板温度为400℃时为10 s。

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来源
《Japanese Journal of Applied Physics. Part 1, Regular Papers, Brief Communications & Review Papers》 |2005年第7a期|p.4859-4862|共4页
作者
Junji NOGUCHI; Naofumi OHASHI; Hizuru YAMAGUCHI; Ken-ichi TAKEDA;
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作者单位

Micro Device Division, Hitachi, Ltd., 6-16-3 Shinmachi, Ome, Tokyo 198-8512, Japan;

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原文格式 PDF
正文语种 eng
中图分类应用物理学;
关键词
Cu interconnect; dielectric breakdown; reliability; surface treatment; TDDB lifetime;

机译：铜互连;介电击穿;可靠性;表面处理;TDDB寿命;

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1. Influence of Cu-Ion Migration and Fine-Line Effect on Time-Dependent Dielectric Breakdown Lifetime of Cu Interconnects [J] . Junji NOGUCHI, Maki KUBO, Ruriko TSUNEDA, Japanese Journal of Applied Physics. Part 1, Regular Papers, Brief Communications & Review Papers . 2005,第1A期

机译：铜离子迁移和细线效应对铜互连线随时间的介电击穿寿命的影响
2. Statistical Analysis of Lifetime Distribution of Time-Dependent Dielectric Breakdown in Cu/Low-k Interconnects by Incorporation of Overlay Error Model [J] . Shinji Yokogawa, Hideaki Tsuchiya Japanese journal of applied physics . 2010,第5issue3期

机译：基于覆盖误差模型的Cu / Low-k互连中时变介电击穿寿命分布统计分析
3. Reduction effect of line edge roughness on time-dependent dielectric breakdown lifetime of Cu/low-κ interconnects by using CF3I etching [J] . Eiichi Soda, Noriaki Oda, Sanae Ito, Journal of Vacuum Science & Technology . 2009,第2期

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4. Successive breakdown mode of time-dependent dielectric breakdown for Cu interconnects and lifetime enhancement under dynamic bias stress [C] . Sol-Kyu Lee, Kyung-Tae Jang, Seol-Min Yi, International Reliability Physics Symposium . 2018

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6. Time Dependent Dielectric Breakdown in Copper Low-k Interconnects: Mechanisms and Reliability Models [O] . Terence K.S. Wong 2012

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Dependence of Time-Dependent Dielectric Breakdown Lifetime on NH_3-Plasma Treatment in Cu Interconnects

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