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首页> 外文期刊>Japanese Journal of Applied Physics. Part 1, Regular Papers, Brief Communications & Review Papers >Low-Temperature Fabrication of Polycrystalline Si Thin Film Using Al-Induced Crystallization without Native Al Oxide at Amorphous Si/Al Interface
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Low-Temperature Fabrication of Polycrystalline Si Thin Film Using Al-Induced Crystallization without Native Al Oxide at Amorphous Si/Al Interface

机译：在非晶Si / Al界面上采用无铝氧化铝的Al诱导结晶法低温制备多晶硅薄膜

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摘要

Low-temperature fabrication of polycrystalline silicon (poly-Si) thin film has been performed by Al-induced crystallization (AIC), and the structural properties have been investigated. In our experiments, to prevent native oxidation of Al film, an amorphous silicon (a-Si)/Al bilayer was formed on the SiO_2/Si substrate by electron beam evaporation without breaking the vacuum. The a-Si/Al/SiO_2/Si structure was then heated at a low temperature of 400℃ to induce AIC. It was confirmed that layer exchange of the a-Si/Al bilayer is induced even though there is no native oxidation of Al film, which was demonstrated by scanning transmission electron microscopy and energy dispersive X-ray analysis. The mechanism for layer exchange of the a-Si/Al bilayer has been discussed. Furthermore, it was verified by scanning electron microscopy and spectroscopic ellipsometry that the a-Si/Al thickness ratio of roughly 1 : 1 is suitable to achieve a flat surface morphology of poly-Si. In addition, it was found, by X-ray diffraction and orientation imaging microscopy, that the Si(111)-oriented grain becomes dominant with decreasing thickness of the a-Si/Al bilayer.
机译：已经通过Al诱导结晶（AIC）进行了多晶硅（poly-Si）薄膜的低温制造，并且已经研究了其结构性质。在我们的实验中，为了防止Al膜的自然氧化，在不破坏真空的情况下，通过电子束蒸发在SiO_2 / Si衬底上形成了非晶硅（a-Si）/ Al双层。然后将α-Si/ Al / SiO_2 / Si结构在400℃的低温下加热以诱发AIC。可以确认，即使没有铝膜的自然氧化，也能引起a-Si / Al双层的层交换，这通过扫描透射电子显微镜和能量色散X射线分析证实。讨论了a-Si / Al双层的层交换机制。此外，通过扫描电子显微镜和椭圆偏振光谱法证实，大约1∶1的a-Si / Al厚度比适合于实现多晶硅的平坦表面形态。另外，通过X射线衍射和取向成像显微镜发现，随着a-Si / Al双层的厚度减小，Si（111）取向的晶粒占主导。

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