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首页> 外文期刊>Japanese Journal of Applied Physics. Part 1, Regular Papers, Brief Communications & Review Papers >Particle Adhesion and Removal on EUV Mask Layers During Wet Cleaning
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Particle Adhesion and Removal on EUV Mask Layers During Wet Cleaning

机译：湿法清洁过程中EUV掩模层上的颗粒粘附和去除

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摘要

Extreme ultraviolet (EUV) masks have a very stringent cleanliness requirement that present new challenges to nanolithography industry. The cleaning of EUV mask surface is required at every exposure level due to the absence of a pellicle layer. In this study, the adhesion and removal of particles on EUV masks is investigated by calculating the interaction force and measuring the adhesion force using atomic force microscopy (AFM). Zeta potential measurements showed that the calculated interaction force was attractive on Si capping layer and Cr absorbed layer for both silica and alumina particle at all pH ranges investigated. However, the measured adhesion force of Si capping layer was similar to that of bare Si at neutral and alkaline pHs. The calculated interaction force of SiO_2 buffer layer was most repulsive and the lowest adhesion force was measured. This indicates that the SiO_2 buffer layer has a better cleaning efficiency at neutral and alkaline pH. The calculation of interaction force between particle and surface and measurement of adhesion force shows that a lower particle removal efficiency was expected on Cr absorber layer surface.
机译：极紫外（EUV）掩模对清洁度有非常严格的要求，这对纳米光刻行业提出了新的挑战。由于没有防护膜层，因此在每个曝光级别都需要清洁EUV掩模表面。在这项研究中，通过计算相互作用力并使用原子力显微镜（AFM）测量粘附力，研究了EUV掩模上颗粒的粘附和去除。 Zeta电位测量结果表明，在所研究的所有pH范围内，对于二氧化硅和氧化铝颗粒，计算得出的相互作用力对Si覆盖层和Cr吸收层均具有吸引力。然而，在中性和碱性pH下，测得的硅覆盖层的粘附力与裸露的硅相似。计算得出的SiO_2缓冲层的相互作用力是最大的，而最低的粘附力是测得的。这表明SiO_2缓冲层在中性和碱性pH下具有更好的清洁效率。颗粒与表面之间的相互作用力的计算和粘附力的测量表明，预期在Cr吸收剂层表面上的颗粒去除效率较低。

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