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首页> 外文期刊>Japanese Journal of Applied Physics. Part 1, Regular Papers, Brief Communications & Review Papers >Ferroelectric Properties of Pt/Pb_5Ge_3O_(11)/Pt and Pt/Pb_5Ge_3O_(11)/HfO_2/Si Structures
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Ferroelectric Properties of Pt/Pb_5Ge_3O_(11)/Pt and Pt/Pb_5Ge_3O_(11)/HfO_2/Si Structures

机译：Pt / Pb_5Ge_3O_（11）/ Pt和Pt / Pb_5Ge_3O_（11）/ HfO_2 / Si结构的铁电性能

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摘要

The ferroelectric properties of metal-ferroelectric-metal (MFM) capacitors with a Pt/Pb_5Ge_3O_(11)(PGO)/Pt structure and metal-ferroelectric-insulator-semiconductor (MFIS) diodes with a Pt/PGO/HfO_2/Si structure were investigated. C-axis-oriented PGO thin films were formed on both Pt/SiO_2/Si and HfO_2 (6 nm)/Si structures by a sol-gel method. Typical values of remanent polarization (2P_r), coercive field (2E_c), and dielectric constant in the MFM capacitors were 5.7 μC/cm~2, 63 kV/ cm, and 50, respectively, and the remanent polarization gradually increased with the switching pulses for up to 1 x 10~(10) cycles. It was also found that the memory window in the MFIS diodes with a 340-nm-thick PGO film was as large as 1.3 V.
机译：具有Pt / Pb_5Ge_3O_（11）（PGO）/ Pt结构的金属铁电金属（MFM）电容器和具有Pt / PGO / HfO_2 / Si结构的金属铁电绝缘体半导体（MFIS）二极管的铁电性能分别为调查。通过溶胶-凝胶法在Pt / SiO_2 / Si和HfO_2（6 nm）/ Si结构上均形成了C轴取向的PGO薄膜。 MFM电容器中剩余极化（2P_r），矫顽场（2E_c）和介电常数的典型值分别为5.7μC/ cm〜2、63 kV / cm和50，并且随着切换脉冲的出现，剩余极化逐渐增加最多1 x 10〜（10）个周期。还发现，具有340 nm厚PGO膜的MFIS二极管中的存储窗口高达1.3V。

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