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首页> 外文期刊>Japanese Journal of Applied Physics. Part 1, Regular Papers, Brief Communications & Review Papers >Temperature-Dependent Photoluminescence of Self-Assembled (In,Ga)As Quantum Dots on GaAs (100): Carrier Redistribution through Low-Energy Continuous States
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Temperature-Dependent Photoluminescence of Self-Assembled (In,Ga)As Quantum Dots on GaAs (100): Carrier Redistribution through Low-Energy Continuous States

机译:GaAs(100)上自组装(In,Ga)As量子点的温度依赖性光致发光:通过低能量连续态进行载流子重新分布

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摘要

Temperature-dependent photoluminescence (PL) studies of an ensemble of self-assembled (In,Ga)As quantum dots (QDs) on GaAs (100) provide insight into the nature of the continuous states between the wetting layer (WL) and QDs. In addition to the well-known anomalous temperature dependence of the PL peak position and width around 90 K due to carrier (electron-hole pair) redistribution through the WL, we observe a similar behavior at much lower temperatures around 30 K. This behavior is attributed to carrier redistribution through the low-energy continuous states between the WL and QDs, directly proving their quasi-two-dimensional character. The smaller changes in the PL spectra than the WL-induced ones, however, indicate that the carrier redistribution and, thus, the spatial extent of the continuous states are restricted to a limited area around the QDs. This is also supported by the constant integrated PL intensity in this temperature range due to the absence of nonradiative recombination within these areas.
机译:GaAs(100)上自组装(In,Ga)As量子点(QD)集合的温度依赖性光致发光(PL)研究提供了对润湿层(WL)和QD之间连续状态性质的洞察力。除了由于载流子(电子-空穴对)通过WL重新分布而导致的PL峰值位置和宽度在90 K附近对温度的众所周知的异常依赖性外,我们还观察到在30 K附近更低的温度下具有类似的行为。归因于通过WL和QD之间的低能量连续状态的载流子重新分布,直接证明了它们的准二维特性。但是,PL谱中的变化比WL引起的变化小,这表明载流子的重新分布以及连续状态的空间范围都被限制在QD周围的有限区域内。由于在这些区域内不存在非辐射复合,因此在此温度范围内恒定的积分PL强度也支持了这一点。

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