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首页> 外文期刊>Japanese Journal of Applied Physics. Part 1, Regular Papers & Short Notes >Reliability Characteristics of poly Si-gated High Quality Chemical Vapor Deposition Hafnium Oxide Gate Dielectric
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Reliability Characteristics of poly Si-gated High Quality Chemical Vapor Deposition Hafnium Oxide Gate Dielectric

机译：多晶硅栅高质量化学气相沉积氧化f栅极电介质的可靠性特征

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摘要

In this paper, reliability characteristics of chemical vapor deposition (CVD) HfO_2 gate stacks with n~+-poly-Si gate electrode are investigated systematically, along with long-term lifetime projection. The area dependence and critical defect density of CVD HfO_2 gate stacks have been investigated and compared to that of SiO_2. Results show that in addition to the significant reduction of tunneling leakage current by a factor of 10~3-10~4, a comparable Weibull slope factor and critical defect density are obtained from a high quality CVD HfO_2 mainly due to the thicker physical thickness, compare to SiO_2. Considering the cumulative impact of temperature acceleration at 150℃, scaling of an effective gate oxide area of 0.1 cm~2 and a maximum allowed fraction of failures of 0.01%, the maximum allowed operating voltage is projected to be ～0.85 V for HfO_2/poly-Si gate stack with equivalent oxide thickness (EOT) = 14.5 A.
机译：本文系统地研究了具有n〜+-多晶硅栅电极的化学气相沉积（HfO_2）栅堆叠的可靠性特征，以及长期寿命预测。研究了CVD HfO_2栅堆叠的面积依赖性和临界缺陷密度，并将其与SiO_2进行了比较。结果表明，除了隧穿漏电流显着减小10〜3-10〜4之外，高质量的CVD HfO_2还可以得到相当的威布尔斜率和临界缺陷密度，这主要是由于物理厚度较厚，比较SiO_2。考虑到150℃温度加速度的累积影响，有效栅氧化面积的定标为0.1 cm〜2以及最大允许失效分数为0.01％，HfO_2 / poly的最大允许工作电压预计为〜0.85 V -Si栅极堆叠，等效氧化物厚度（EOT）= 14.5 A.

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