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首页> 外文期刊>Japanese Journal of Applied Physics. Part 2, Letters >Microroughness Reduction of Tungsten Films by Laser Polishing Technology with a Line Beam
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Microroughness Reduction of Tungsten Films by Laser Polishing Technology with a Line Beam

机译：线束激光抛光技术降低钨膜的粗糙度

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摘要

An optical polishing technology utilizing a line shaped excimer laser beam was introduced to reduce the microroughness of the tungsten films deposited onto the Si wafer surface. The results of the microroughness reduction and the comparisons were made before and after the line beam irradiations for as-grown and post-chemical mechanical planarization (CMP) tungsten films as a function of irradiated laser wavelength, in 248 nm and 308 nm, laser fluence, and the irradiated number of pulses. Characterizations of the microroughness were performed by atomic forced microscopy. The root-mean-square (RMS) roughness and peak-to-valley, R_(p-v), roughness of the as-grown tungsten films were decreased by about 30%-40% compared with the initial values. The RMS roughnesses of the post-CMP tungsten films were 25-30 A for a 5 μm x 5 μm measurement. Fluctuations of the reduced microroughness were mainly caused by the beam inhomogeneity and local distributions of the hot (peak energy) spots along or across the line beam. The lowest RMS roughness of 8.0-8.4 A was obtained for the post-CMP tungsten films by the irradiation of 30 pulses of 308 nm with a fluence of 100 mJ/cm~2. Irradiation of the 248 nm and 308 nm homogenized flat-top line beam reduced the peak-to-valley roughness, R_(p-v), of the post-CMP tungsten films down to 1/3 of its initial value. It was found that the optimum number of pulses for microroughness diminution of the post-CMP tungsten film is 50 pulses with a fluence of 150 mJ/cm~2. The wavelength dependency of the microroughness diminution was not surprising, but 308 nm irradiation showed a slightly better performance with consistent results than the 248 nm irradiation did.
机译：引入了利用线形准分子激光束的光学抛光技术，以减少沉积在Si晶片表面的钨膜的微观粗糙度。化学成膜后和化学机械平坦化（CMP）钨膜的线束辐照前后的微粗糙度降低结果和比较结果与所辐照的激光波长（在248 nm和308 nm），激光通量有关，以及照射的脉冲数。显微粗糙度的表征是通过原子强制显微镜进行的。所生长的钨薄膜的均方根（RMS）粗糙度和峰谷粗糙度R_（p-v）与初始值相比降低了约30％-40％。对于5μmx 5μm的测量，CMP后的钨膜的RMS粗糙度为25-30A。降低的微观粗糙度的波动主要是由于光束不均匀性以及沿（或横跨）线光束的热点（峰值能量）点的局部分布所致。通过以100 mJ / cm〜2的能量通量辐照30个308 nm脉冲，可获得CMP后的钨膜的最低RMS粗糙度为8.0-8.4A。辐照248 nm和308 nm均一的平顶线光束，将CMP后的钨膜的峰谷粗糙度R_（p-v）降低到其初始值的1/3。已经发现，用于CMP后钨膜的微粗糙度减小的最佳脉冲数是50个脉冲，通量为150mJ / cm〜2。微粗糙度减小的波长依赖性不足为奇，但是与248 nm辐照相比，308 nm辐照显示出更好的性能和一致的结果。

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