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首页> 外文期刊>Japanese Journal of Applied Physics. Part 2, Letters >Properties of Ru Thin Films Fabricated on TiN by Metal-Organic Chemical Vapor Deposition
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Properties of Ru Thin Films Fabricated on TiN by Metal-Organic Chemical Vapor Deposition

机译：金属有机化学气相沉积法在TiN上制备Ru薄膜的性能

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摘要

Ruthenium (Ru) thin films were fabricated on TiN, as well as on SiO_2, by metal-organic chemical vapor deposition using tris(2,4-octanedionato)ruthenium. We characterized the Ru films grown on TiN, and compared them with the films prepared on SiO_2. The Ru films deposited on TiN showed weak crystallinity and random grain orientation similar to the films on SiO_2, but revealed notably rougher surfaces than the films on SiO_2. Moreover, deposition rates on TiN were lower than those on SiO_2. These properties of the Ru films grown on TiN originated from the difficulties in nucleation and growth at the initial stage of the deposition. The inferior surface flatness and deposition rate could cause structural instability and poor coverage of the Ru electrode at the bottom of a deep concave hole for a three-dimensional capacitor where the Ru film was in contact with a diffusion barrier metal TiN plug.
机译：通过使用三（2,4-辛二酮）钌进行金属有机化学气相沉积，在TiN和SiO_2上制备了钌（Ru）薄膜。我们表征了在TiN上生长的Ru膜，并将它们与在SiO_2上制备的膜进行了比较。与SiO_2上的薄膜相似，沉积在TiN上的Ru薄膜具有较弱的结晶度和无规的晶粒取向，但表面明显比SiO_2上的薄膜更粗糙。而且，TiN上的沉积速率低于SiO_2上的沉积速率。在TiN上生长的Ru膜的这些特性源自沉积初期的成核和生长困难。较差的表面平整度和沉积速率可能导致Ru电极在Ru膜与扩散阻挡层金属TiN插塞接触的三维电容器的深凹孔底部处的Ru电极结构不稳定和覆盖率差。

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