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首页> 外文期刊>Japanese Journal of Applied Physics. Part 2, Letters >High-Speed Damage-Free Contact Hole Etching Using Dual Shower Head Microwave-Excited High-Density-Plasma Equipment
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High-Speed Damage-Free Contact Hole Etching Using Dual Shower Head Microwave-Excited High-Density-Plasma Equipment

机译：使用双喷头微波激发的高密度等离子设备进行高速无损刻蚀

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摘要

Dual shower head microwave-excited plasma etching equipment for separating the plasma-excited region from the etching process region has been developed. With the aim of realization of damage-free etching, the carrier activation of boron-doped p~+-Si is investigated after plasma irradiation. The damage-free-etching mode in which holes do not deactivate was found. Contact holes are successfully etched using a surface damage-free etching process consisting of high-speed etching mode and surface damage-free etching mode. The damage-free-etching mode consists of low-self-bias condition and a low etching gas flow rate as compared with the high-speed mode. For both modes, the etcher can maintain the process uniformity because the etcher can control self-bias voltages without changing other process parameters.
机译：已经开发出用于将等离子体激发区域与蚀刻处理区域分开的双喷头微波激发等离子体蚀刻设备。为了实现无损伤刻蚀，研究了等离子体照射后掺硼的p〜+ -Si的载流子活化。发现了不破坏孔的无损伤蚀刻模式。使用包括高速蚀刻模式和表面无损伤蚀刻模式的无表面损伤蚀刻工艺成功蚀刻了接触孔。与高速模式相比，无损伤蚀刻模式包括低自偏压条件和低蚀刻气体流速。对于两种模式，蚀刻机都可以保持过程均匀性，因为蚀刻机可以控制自偏置电压，而无需更改其他过程参数。

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