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首页> 外文期刊>Japanese Journal of Applied Physics. Part 2, Letters >Characterization of Plasma Nitridation Impact on Lateral Extension Profile in 50 nm N-MOSFET by Scanning Tunneling Microscopy
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Characterization of Plasma Nitridation Impact on Lateral Extension Profile in 50 nm N-MOSFET by Scanning Tunneling Microscopy

机译：扫描隧道显微镜表征50nm N-MOSFET中等离子体氮化对横向延伸轮廓的影响

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摘要

The electrical performances of sub-50-nm n-metal-oxide-semiconductor field effect transistors (n-MOSFETs) are improved when a plasma nitridation process is used after the gate electrodes are formed. The maximum drive current is increased by 2% and the minimum gate length is shrunk by 5% while the off-leakage current is maintained. Inverse modeling suggested that these improvements were due to nitridation-induced changes in the two-dimensional carrier profile, and scanning tunneling microscopy confirmed that they were. The plasma nitridation decreased the overlapping length from 12nm to 10nm and increased the steepness of the lateral abruptness of the extension region from 3.6 nm/decade to 1.8nm/decade. Such an optimized profile is thought to be mainly due to nitrogen suppressing the lateral anomalous diffusion of the arsenic piled-up along the interface between the silicon substrate and the insulating layer.
机译：当在形成栅电极后使用等离子体氮化工艺时，亚50纳米以下的n-金属氧化物半导体场效应晶体管（n-MOSFET）的电性能得到改善。最大驱动电流增加2％，最小栅极长度缩小5％，同时保持了漏电流。逆模型表明，这些改进是由于氮化引起的二维载流子分布的变化，而扫描隧道显微镜证实了它们的改善。等离子体氮化将重叠长度从12nm减小到10nm，并将延伸区域的横向突变的陡度从3.6nm /十年增加到1.8nm /十年。认为这种优化的轮廓主要是由于氮抑制了沿着硅衬底与绝缘层之间的界面堆积的砷的横向异常扩散。

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