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首页> 外文期刊>Japanese Journal of Applied Physics. Part 1, Regular Papers & Short Notes >InGaAs/AlGaAs Quantum Well Laterally-Coupled Distributed Feedback Laser
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InGaAs/AlGaAs Quantum Well Laterally-Coupled Distributed Feedback Laser

机译:InGaAs / AlGaAs量子阱横向耦合分布式反馈激光器

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摘要

InGaAs/AlGaAs quantum well laterally-coupled distributed feedback (LC-DFB) laser is designed and fabricated by electron beam lithography and reactive ion etching. The LC-DFB laser eliminates the need of a crystal regrowth in a conventional DFB laser fabrication process. A single mode lasing at a wavelength of 967.8 nm with a side mode suppression ratio of 46 dB was achieved under CW operation at room temperature. The threshold current and maximum peak output power were 15 mA and 19 mW at 90mA injection, respectively.
机译:InGaAs / AlGaAs量子阱横向耦合分布式反馈(LC-DFB)激光器是通过电子束光刻和反应离子刻蚀技术设计制造的。 LC-DFB激光器消除了传统DFB激光器制造过程中晶体再生的需要。在室温下连续波操作下,获得了波长为967.8 nm的单模激光,副模抑制比为46 dB。在注入电流为90mA时,阈值电流和最大峰值输出功率分别为15mA和19mW。

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