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首页> 外文期刊>Japanese journal of applied physics >Persistent photocurrent characteristics of ZnO polycrystalline films prepared by RF magnetron sputtering
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Persistent photocurrent characteristics of ZnO polycrystalline films prepared by RF magnetron sputtering

机译：射频磁控溅射制备ZnO多晶薄膜的持久光电流特性

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摘要

We study zinc oxide (ZnO) polycrystalline films highly aligned in the hexagonal c-axis direction (0002) deposited by RF magnetron sputtering. Photoconductive decay current characteristics are investigated. The decay current shows a long decay tail called persistent current. This temporal feature is analyzed with regard to the inhomogeneous amorphous semiconductor structure. We conclude that the photo-excited carriers of electrons and holes recombine between spatially separated states near the thermo-activated conduction band edge and those near the valence band edge. Although the activation energy of the recombination process is dependent on the ultraviolet irradiation intensity, under weak values an activation potential of about 0.15 eV is obtained, which clarifies the carrier transport in this polycrystalline system, and may give rise to future applications of this system, e.g., catalytic processes. (C) 2019 The Japan Society of Applied Physics
机译：我们研究了通过射频磁控溅射在六边形c轴方向（0002）上高度对齐的氧化锌（ZnO）多晶膜。研究了光电导衰减电流特性。衰减电流显示出一条长的衰减尾巴，称为持续电流。关于不均匀的非晶半导体结构，分析了该时间特征。我们得出结论，电子和空穴的光激发载流子在热激活的导带边缘附近和价带边缘附近的空间分离状态之间重组。尽管重组过程的活化能取决于紫外线的照射强度，但在弱值下可获得约0.15 eV的活化电位，这澄清了该多晶体系中的载流子传输，并可能引起该体系的未来应用，例如催化过程。 （C）2019日本应用物理学会

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  • 来源
    《Japanese journal of applied physics》 |2019年第5期|055505.1-055505.5|共5页
  • 作者

    Worasawat Suchaada; Tasaki Katsuyosi; Neo Yoichiro; Pecharapa Wisanu; Hatanaka Yoshinori; Mimura Hidenori;

  • 作者单位

    Shizuoka Univ Grad Sch Sci & Technol 3-5-1 Johoku Hamamatsu Shizuoka 4328011 Japan|King Mongkuts Inst Technol Ladkrabang Collage Nanotechnol Bangkok 10520 Thailand;

    Shizuoka Univ Grad Sch Integrated Sci & Technol 3-5-1 Johoku Hamamatsu Shizuoka 4328011 Japan;

    Shizuoka Univ Res Inst Elect 3-5-1 Johoku Hamamatsu Shizuoka 4328011 Japan;

    King Mongkuts Inst Technol Ladkrabang Collage Nanotechnol Bangkok 10520 Thailand;

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