Compensation effects between impurity cations in single crystals of a wide gap semiconductor β-Ga_2O_3 prepared by the floating zone method

Tomioka Yasuhide; Ozaki Yasuko; Inaba Hideki; Ito Toshimitsu

首页> 外文期刊>Japanese journal of applied physics >Compensation effects between impurity cations in single crystals of a wide gap semiconductor β-Ga_2O_3 prepared by the floating zone method

【24h】

Compensation effects between impurity cations in single crystals of a wide gap semiconductor β-Ga_2O_3 prepared by the floating zone method

机译：浮区法制备的宽禁带半导体β-Ga_2O_3单晶中杂质阳离子之间的补偿效应

获取原文

获取原文并翻译 | 示例

掌桥外文数据库（机构版） >>

开具论文收录证明 >>

文献代查 >>

页面导航

摘要
著录项
相似文献
相关主题

摘要

The resistivity rho and Hall coefficient R-H of a wide gap semiconductor beta-Ga2O3 have been investigated using crystals with various Si-doping that were purified by the zone-melting process. For the crystals with the conduction electron density

机译：使用通过区域熔化工艺纯化的具有各种Si掺杂的晶体，研究了宽间隙半导体β-Ga2O3的电阻率rho和霍尔系数R-H。对于具有导电电子密度的晶体

著录项

来源
《Japanese journal of applied physics》 |2019年第9期|091009.1-091009.5|共5页
作者
Tomioka Yasuhide; Ozaki Yasuko; Inaba Hideki; Ito Toshimitsu;
展开▼
作者单位

Natl Inst Adv Ind Sci & Technol Elect & Photon Res Inst 1-1-1 Higashi Tsukuba Ibaraki 3058565 Japan;

展开▼
收录信息
原文格式 PDF
正文语种 eng
中图分类
关键词

相似文献

外文文献
中文文献
专利

1. Optical and scintillation properties of alkaline earth doped Ga_2O_3 single crystals prepared by the floating zone method [J] . Yanagida Takayuki, Kawaguchi Noriaki Japanese journal of applied physics . 2020,第SC期

机译：通过浮区法制备碱土掺杂Ga_2O_3单晶的光学和闪烁性能
2. Ultra-fast scintillation properties of β-Ga_2O_3 single crystals grown by Floating Zone method [J] . Nuotian He, Huili Tang, Bo Liu, Nuclear Instruments & Methods in Physics Research . 2018,第APRa21期

机译：浮区法生长的β-Ga_2O_3单晶的超快闪烁特性
3. Scintillation properties of BaSiO_3:Eu single crystals prepared by the floating zone method [J] . Daisuke Nakauchi, Go Okada, Noriaki Kawaguchi, Journal of materials science . 2017,第10期

机译：浮区法制备的BaSiO_3：Eu单晶的闪烁特性
4. Estimation of Carrier Density of Wide Bandgap Semiconductor β-Ga_2O_3 Single Crystals by THz Reflectance Measurement [C] . Shingo Saito, Takeyoshi Onuma, Kohei Sasaki, International Conference on Infrared, Millimeter, and Terahertz Waves . 2015

机译：通过THz反射测量估计宽带隙半导体β-GA_2O_3单晶的载波密度
5. Defects Analysis of Wide Bandgap Semiconductor Single Crystals via Synchrotron White Beam X-ray Topography [D] . Sun, Shun 2013

机译：同步加速器白束X射线形貌分析宽带隙半导体单晶的缺陷
6. Environmentally friendly method to grow wide-bandgap semiconductor aluminum nitride crystals: Elementary source vapor phase epitaxy [O] . PeiTsen Wu, Mitsuru Funato, Yoichi Kawakami -1

机译：生长宽带隙半导体氮化铝晶体的环保方法：基本源气相外延
7. Thermoelectric Properties of Single Crystalline B₄C Prepared by a Floating Zone Method [O] . Itaru Gunjishima, Takaya Akashi, Takashi Goto 2001

机译：单晶B _{4 C的热电性能通过浮区法制备}
8. Growth of semiconductor compound single crystal InSb by floating zone method (M-3) [R] . Nakatani, I. 1993

机译：浮区法（m-3）生长半导体化合物单晶Insb

Compensation effects between impurity cations in single crystals of a wide gap semiconductor β-Ga_2O_3 prepared by the floating zone method

摘要

著录项

相似文献

相关主题

期刊订阅