Epitaxial AIN on c-plane sapphire by plasma nitriding

Chen Yi-Chun; Chang Li

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Epitaxial AIN on c-plane sapphire by plasma nitriding

机译：通过等离子氮化在C平面蓝宝石上外延AIN

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Nitridation of sapphire to form epitaxial AlN by microwave plasma containing nitrogen gas has been investigated to be an efficient process. Structural characterization with chemical analysis by X-ray diffraction and X-ray photoelectron spectroscopy shows that an epitaxial AlN film containing oxygen can form on sapphire by using pure nitrogen plasma. Furthermore, nitridation with N-2/H-2 plasma not only improves the crystallinity of the epitaxial AlN film without oxygen, but also significantly increases the nitridation rate to 9 nm min(-1), resulting in 270 nm thick AlN for 30 min plasma nitriding. (C) 2019 The Japan Society of Applied Physics

机译：已经研究了含有氮气的微波血浆形成外延Aln的蓝宝石的氮化是有效的过程。通过X射线衍射和X射线光电子能力与化学分析的结构表征表明，通过使用纯氮等离子体，含有氧的外延Aln膜可以在蓝宝石上形成。此外，具有N-2 / H-2等离子体的氮化不仅改善了外延Aln膜的结晶度，而且还显着增加了9nm min（-1）的氮化速率，导致270nm厚的Aln持续30分钟等离子体氮化。（c）2019年日本应用物理学会

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《Japanese journal of applied physics》 |2019年第sc期|SC1012.1-SC1012.6|共6页
作者
Chen Yi-Chun; Chang Li;
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Natl Chiao Tung Univ Dept Mat Sci & Engn Hsinchu Taiwan;

Natl Chiao Tung Univ Dept Mat Sci & Engn Hsinchu Taiwan;

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1. Epitaxial AIN on c-plane sapphire by plasma nitriding [J] . Chen Yi-Chun, Chang Li Japanese journal of applied physics . 2019,第SC期

机译：等离子体氮化法在c面蓝宝石上进行外延AIN
2. A1N/nitrided sapphire and AIN/non-nitrided sapphire hetero-structures epitaxially grown by pulsed laser deposition: A comparative study [J] . Luo Jianghua, Wang Wenliang, Zheng Yulin, Vacuum: Technology Applications & Ion Physics: The International Journal & Abstracting Service for Vacuum Science & Technology . 2017,第期

机译：A1N /氮化蓝宝石和AIN /非氮化蓝宝石异结构通过脉冲激光沉积外延生长：比较研究
3. Formation of m-plane AIN on plasma-nitrided m-plane sapphire [J] . Ma Zhih-Cheng, Chiu Kun-An, Wei Lin-Lung, Japanese journal of applied physics . 2019,第SC期

机译：等离子氮化的m面蓝宝石上m面AIN的形成
4. Plasma-assisted molecular beam epitaxial growth of AIN films on vicinal sapphire (0001) substrates [C] . X.Q. Shen, H. Okumura International Conference on Silicon Carbide and Related Materials 2003 pt.2(ICSCRM 2003); 20031005-20031010; Lyon; FR . 2003

机译：等离子体辅助分子束外延生长在邻近蓝宝石（0001）衬底上的AIN膜
5. Epitaxial growth of indium nitride on (0001) sapphire. [D] . Bradshaw, Morgan Lynn. 2009

机译：（0001）蓝宝石上氮化铟的外延生长。
6. Structural and Photoelectric Properties of Epitaxially Grown Vanadium Dioxide Thin Films on c-Plane Sapphire and Titanium Dioxide [O] . Jason A. Creeden, Scott E. Madaras, Douglas B. Beringer, -1

机译：c面蓝宝石和二氧化钛上外延生长的二氧化钒薄膜的结构和光电性能
7. Epitaxial growth of beta-Ga2O3/epsilon-Ga2O3 polymorphic heterostructures on c-plane sapphire for deep-ultraviolet optoelectronics [O] . Nasir A. Alfaraj, Kuang-Hui Li, Chun Hong Kang, 2020

机译：基于紫外光电子的C面蓝宝石上的β-Ga2O3 /ε-Ga2O3多态性异质结构的外延生长
8. High Quality Aluminum Nitride Epitaxial Layers Grown on Sapphire Substrates [R] . Saxler, A., Kung, P., Sun, C. J., 1994

机译：在蓝宝石衬底上生长的高质量氮化铝外延层

Epitaxial AIN on c-plane sapphire by plasma nitriding

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