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首页> 外文期刊>Japanese journal of applied physics >High quality nitride semiconductors grown on novel ScAIMgO_4 substrates and their light emitting diodes
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High quality nitride semiconductors grown on novel ScAIMgO_4 substrates and their light emitting diodes

机译：在新型Scaimgo_4基板上生长的高品质氮化物半导体及其发光二极管

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摘要

III-N semiconductors growth on high quality ScAlMgO4 (SCAMO) substrates was studied. The GaN epitaxial layer grown on the SCAMO substrate showed a low defect density of 5.6 x 10(7) cm(-2) evaluated by cathode luminescence and had a distinct improvement in crystallinity compared to the GaN layer on a sapphire substrate. LEDs on both SCAMO and sapphire substrates were grown, and their optical properties were compared. The LED on the SCAMO substrate showed high luminescence efficiency by photoluminescence, and it was 14.3% at 300 K. Bright emission from the LED on the SCAMO substrate was observed under current injection and the electroluminescence properties revealed that the external efficiency of the LED on the SCAMO substrate was 15% higher than that of the LED on the sapphire substrate. (C) 2019 The Japan Society of Applied Physics
机译：研究了高质量的Scalmgo4（Scamo）底物上的III-N半导体生长。在扫描底物上生长的GaN外延层显示出通过阴极发光评估的5.6×10（7 )cm（-2）的低缺陷密度，并且与蓝宝石衬底上的GaN层相比具有明显的结晶的改善。扫描和蓝宝石底物上的LED均生长，并比较它们的光学性质。 Scamo底物上的LED通过光致发光显示出高的发光效率，在300k下为14.3％。在电流注射下观察到扫描底物上的LED上的亮度发射，电致发光性能显示LED的外部效率Scamo衬底比蓝宝石衬底上的LED高15％。 （c）2019年日本应用物理学会

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  • 来源
    《Japanese journal of applied physics》 |2019年第sc期|SC1041.1-SC1041.5|共5页
  • 作者

    Ueta Akio; Ohno Hiroshi; Yanagita Naoto; Ryoki Naoya; Miyano Kentaro; Ishibashi Akihiko; Nobuoka Masaki;

  • 作者单位

    Panasonic Corp 2-7 Matsuba Tyo Kadoma Osaka 5718502 Japan;

    Panasonic Corp 2-7 Matsuba Tyo Kadoma Osaka 5718502 Japan;

    Panasonic Corp 2-7 Matsuba Tyo Kadoma Osaka 5718502 Japan;

    Panasonic Corp 2-7 Matsuba Tyo Kadoma Osaka 5718502 Japan;

    Panasonic Corp 2-7 Matsuba Tyo Kadoma Osaka 5718502 Japan;

    Panasonic Corp 2-7 Matsuba Tyo Kadoma Osaka 5718502 Japan;

    Panasonic Corp 2-7 Matsuba Tyo Kadoma Osaka 5718502 Japan;

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