Origin of Fermi-level depinning at metal/Ge interfaces: first-principles study on effect of segregation

Nishimoto Toshiki; Nakayama Takashi

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Origin of Fermi-level depinning at metal/Ge interfaces: first-principles study on effect of segregation

机译：金属/葛界面的费米级脱落的起源：第一原理研究分离效果的研究

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To clarify how the Fermi-level (FL) pinning changes by segregation, we artificially produced metal/X/Ge (001) interfaces with various segregation atoms X that terminate interface Ge atoms and calculate the Schottky barriers at these interfaces by the first-principles calculations. We found the chemical trend that the segregation of II-and III-family atoms lowers the FL position, while that of V-and VI-family atoms raises the FL position. It was shown that such trend reflects the electron transfer around the interface. (C) 2019 The Japan Society of Applied Physics

机译：为了阐明Fermi-Level（FL）通过隔离改变的FERMI级（FL）如何改变，我们用各种分离原子X接口，终止界面GE原子并通过第一原理计算这些界面处的肖特基障碍计算。我们发现II-and III家族原子的分离降低了流体位置的化学趋势，而V-and VI系列原子的偏离呈现流动位置。结果表明，这种趋势反映了界面周围的电子传递。（c）2019年日本应用物理学会

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《Japanese journal of applied physics》 |2019年第2019期|SIIB11.1-SIIB11.5|共5页
作者
Nishimoto Toshiki; Nakayama Takashi;
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Chiba Univ Dept Phys Inage Ku Yayoi 1-33 Chiba 2638522 Japan;

Chiba Univ Dept Phys Inage Ku Yayoi 1-33 Chiba 2638522 Japan;

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Origin of Fermi-level depinning at metal/Ge interfaces: first-principles study on effect of segregation

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