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首页> 外文期刊>Japanese journal of applied physics >Fabrication of group Ⅳ semiconductor alloys on Si substrate applying Al paste with screen-printing
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Fabrication of group Ⅳ semiconductor alloys on Si substrate applying Al paste with screen-printing

机译：基于丝网印刷施用Al粘贴的Si衬底中的α半导体合金的制备

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摘要

We investigated the influence of Sn and Ge ratio in Al paste to fabricate Si-based alloy semiconductor on large-area Si substrate using a conventional screen-printing process and high-temperature treatment steps. From the X-ray diffraction patterns, crystalline SiSn peaks with applying Al-Sn paste have been detected and Sn content in the SiSn layer was estimated around 0.35%, close to the level of solid solubility of Sn in Si. In addition, the Sn depth profile showed similar behavior with AI, which confirms the concept of a liquid epitaxial growth using Al. On the other hand the SiGe peaks with applying Al-Sn-Ge paste were clearly observed and their main peaks were shifted to a higher angle linearly with decreasing the Ge ratio in the paste. It was suggested that Sn was segregated easily to the surface if in coexistence with Ge due to its lower olubility in SiGe systems. (C) 2020 The Japan Society of Applied Physics
机译：我们研究了使用常规丝网印刷工艺和高温处理步骤在大面积Si衬底上制造S1基合金半导体的Sn和Ge比的影响。从X射线衍射图案中，已经检测到具有施加Al-Sn浆料的结晶Sisn峰，并且Sisn层中的SN含量估计约为0.35％，接近Si中Sn的固体溶解度水平。此外，SN深度谱显示与AI类似的行为，其证实了使用Al的液体外延生长的概念。另一方面，清楚地观察到具有施用Al-Sn-Ge糊的SiGe峰，并且它们的主峰随着糊剂中的GE比率线性地向较高的角度移动到更高的角度。建议如果在SiGe系统中的olubility较低的糖，则SN被易于与GE共存，容易地分离。 （c）2020日本应用物理学会

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  • 来源
    《Japanese journal of applied physics》 |2020年第sg期|SGGF07.1-SGGF07.4|共4页
  • 作者

    Nakahara Masahiro; Matsubara Moeko; Suzuki Shota; Dhamrin Marwan; Miyamoto Satoru; Hainey Mel Forrest Jr.; Usami Noritaka;

  • 作者单位

    Toyo Aluminium KK 341-14 Higashiyama Hino Cho Shiga 5291608 Japan|Nagoya Univ Grad Sch Engn Nagoya Aichi 4648603 Japan;

    Toyo Aluminium KK 341-14 Higashiyama Hino Cho Shiga 5291608 Japan;

    Toyo Aluminium KK 341-14 Higashiyama Hino Cho Shiga 5291608 Japan;

    Toyo Aluminium KK 341-14 Higashiyama Hino Cho Shiga 5291608 Japan;

    Nagoya Univ Grad Sch Engn Nagoya Aichi 4648603 Japan;

    Nagoya Univ Grad Sch Engn Nagoya Aichi 4648603 Japan;

    Nagoya Univ Grad Sch Engn Nagoya Aichi 4648603 Japan;

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