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首页> 外文学位 >Manipulating the epitaxial growth of highly lattice-mismatched III-V semiconductors: Indium arsenide and its alloys on gallium arsenide substrates.
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Manipulating the epitaxial growth of highly lattice-mismatched III-V semiconductors: Indium arsenide and its alloys on gallium arsenide substrates.

机译：操纵高度晶格不匹配的III-V半导体的外延生长：砷化铟及其在砷化镓衬底上的合金。

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摘要

The inability to grow high-quality epitaxial films which are lattice-mismatched to the starting substrate limits the semiconductor materials available for commercial and device physics applications. This work describes how the kinetic pathways of nucleation, growth, and strain relaxation may be manipulated to alter the surface morphology and defect structure of highly-strained layers.The evolution of InAs islands on (100) and (111)B GaAs substrates has been investigated by varying growth parameters during metalorganic chemical vapor deposition. Island geometry, InAs nucleus saturation density, and the influence of AsHIt is then shown that epitaxial growth can be manipulated for two very different types of device applications. An approach to adjusting the dimensions of InAs islands for low dimensional, as-grown nanostructures is presented. Moreover, controlled registration of InAs clusters and selective-area growth of III-V thin-films on GaAs substrates is achieved via a novel combined high dose electron beam lithography/epitaxial growth technique. Planar InAs films can also be grown on both substrate orientations by altering the growth conditions. By exploiting the advantageous nature of the initial islands on (111)B GaAs substrates, we have produced atomically terraced, fully relaxed InAs films with misfit dislocations confined to the epilayer/substrate interface. Finally, a general multi-step approach for creating high quality lattice-mismatched active regions is discussed.
机译：无法生长与起始衬底晶格不匹配的高质量外延膜，限制了可用于商业和设备物理应用的半导体材料。这项工作描述了如何控制成核，生长和应变松弛的动力学途径，以改变高应变层的表面形态和缺陷结构。（100）和（111）B GaAs衬底上InAs岛的演化已经通过改变有机金属化学气相沉积过程中的生长参数进行了研究。然后显示出岛的几何形状，InAs核饱和密度以及AsHIt的影响，可以针对两种截然不同类型的器件应用来控制外延生长。提出了一种针对低尺寸，生长态纳米结构调整InAs岛尺寸的方法。此外，通过新颖的组合高剂量电子束光刻/外延生长技术实现了InAs簇的受控配准和GaAs衬底上III-V薄膜的选择性区域生长。平面InAs膜也可以通过改变生长条件在两个衬底方向上生长。通过利用（111）B GaAs衬底上初始岛的有利性质，我们生产了原子梯形，完全弛豫的InAs薄膜，其错配位错局限于表层/衬底界面。最后，讨论了用于创建高质量晶格不匹配有源区的通用多步骤方法。

著录项

  • 作者

    Welser, Roger Edward.;

  • 作者单位

    Yale University.;

  • 授予单位 Yale University.;
  • 学科 Engineering Electronics and Electrical.Engineering Materials Science.Physics Condensed Matter.
  • 学位 Ph.D.
  • 年度 1995
  • 页码 177 p.
  • 总页数 177
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

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