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首页> 美国政府科技报告 >Research and Development of Technologies for the Preparation of III-V Semiconductor Materials and on Methods for Evaluation of the Quality of These Materials - Gallium Arsenide Crystals - Gallium Arsenide Crucible Pulling
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Research and Development of Technologies for the Preparation of III-V Semiconductor Materials and on Methods for Evaluation of the Quality of These Materials - Gallium Arsenide Crystals - Gallium Arsenide Crucible Pulling

机译：III-V半导体材料制备技术的研究与开发及这些材料质量评价方法 - 砷化镓晶体 - 砷化镓坩埚拉制

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The economic synthesis of the polycrystalline starting material was investigated. For the industrial production of gallium arsenide crystals, which are used as substrates for the epitaxial growth of basic material for light emitting diodes, the Czochralski liquid encapsulation technique was developed. After preliminary experiments in a small puller, the parameters for crystal growth were tested and optimized in pulling equipment which was specially constructed for this purpose. Methods for diameter control were tested as well. By means of production scale pulling of crystals with a diameter of 50 mm and a weight of 1.4 kg with dislocation densities of 50,000/sq cm, the objective was fully achieved.

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