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Preparation of doped gallium arsenide single crystal, useful to produce gallium arsenide substrate wafer, comprises melting gallium arsenide starting material and subsequently making the gallium arsenide melts
Preparation of doped gallium arsenide single crystal, useful to produce gallium arsenide substrate wafer, comprises melting gallium arsenide starting material and subsequently making the gallium arsenide melts
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机译：用于生产砷化镓衬底晶片的掺杂砷化镓单晶的制备包括熔化砷化镓起始材料，然后使砷化镓熔化
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摘要
Preparation of doped gallium arsenide single crystal, comprises melting gallium arsenide starting material and subsequently making the gallium arsenide melts, where the gallium arsenide melt contains an excess of gallium in comparison with the stoichiometric composition, and the boron concentration in the melt or in the crystal is at least 5x 10 1 7cm - 3. An independent claim is included for the gallium arsenide single crystal with a charge carrier concentration of at least 1x 10 1 6cm - 3or 1x 10 1 5cm - 3and a maximum of 1x 10 1 8cm - 3and an optical absorption coefficient of 2.5 or 2 cm - 1at a wavelength of 1000 nm, more than 1.8 or 1.4 cm - 1at a wavelength of 1100 nm and a maximum of 0.8 or 1 cm - 1at a wavelength of 1200 nm.
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