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首页> 外文期刊>Japanese journal of applied physics >Carrier transport study on triphenylamine-thienothiophene-based hole transport material by MIS-CELIV method
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Carrier transport study on triphenylamine-thienothiophene-based hole transport material by MIS-CELIV method

机译:MIS-CERIV方法对三苯胺 - Thienhisheneophene的孔输送材料的载​​体运输研究

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摘要

Charge carrier mobility measurement of a promising hole transport material, 4,4'-(thieno[3,2-b]thiophene-2,5-diyl)bis(N,N-bis(4-methoxyphenyl)aniline) (TT-2,5-TPA), with a p-dopant, lithium bis(trifluoromethanesulfonyl)imide (LiTFSI) at various doping concentration, was carried out by utilizing metal-insulator-semiconductor charge extraction by the linearly increasing voltage (MIS-CELIV) method. Doping concentration dependence and temperature dependence of the hole mobility in TT-2,5-TPA thin films with LiTFSI were investigated in the MIS-CELIV measurement, and the enhancement of hole mobility and suppression of activation energy were discussed by taking the thermal activated hopping process into consideration. (C) 2020 The Japan Society of Applied Physics
机译:充电载流子迁移率测量,有希望的空穴传输材料,4,4' - (噻吩[3,2-B]噻吩-2,5-二基)双(n,n-bis(4-甲氧基苯基)苯胺)(tt-通过使用线性增加的电压(MIS-CERIV)方法,通过使用金属 - 绝缘体 - 半导体电荷提取来进行2,5-TPA)酰锂双(三氟甲磺酰基)酰亚胺(LITFSI),通过线性增加的电压(MIS-CERIV)方法进行。在MIS-CERIV测量中研究了掺杂TT-2,5-TPA薄膜的空穴迁移率的掺杂浓度依赖性和温度依赖性,并通过采用热激活的跳跃来讨论孔迁移率和激活能量的抑制的增强考虑到过程。 (c)2020日本应用物理学会

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  • 来源
    《Japanese journal of applied physics》 |2020年第sg期|SGGG01.1-SGGG01.6|共6页
  • 作者单位

    Osaka Univ Grad Sch Engn Div Elect Elect & Informat Engn 2-1 Yamada Oka Suita Osaka 5650871 Japan;

    Osaka Univ Grad Sch Engn Div Elect Elect & Informat Engn 2-1 Yamada Oka Suita Osaka 5650871 Japan;

    Univ Cergy Pontoise Lab Physicochim Polymeres & Interfaces 5 Mail Gay Lussac F-95000 Neuville Sur Oise France;

    Univ Cergy Pontoise Lab Physicochim Polymeres & Interfaces 5 Mail Gay Lussac F-95000 Neuville Sur Oise France;

    VNU Univ Sci Fac Phys Hanoi 120034 Vietnam;

    Osaka Univ Grad Sch Engn Div Elect Elect & Informat Engn 2-1 Yamada Oka Suita Osaka 5650871 Japan;

    Osaka Univ Grad Sch Engn Div Elect Elect & Informat Engn 2-1 Yamada Oka Suita Osaka 5650871 Japan;

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