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首页> 外文期刊>Japanese journal of applied physics >Electrical properties and conduction mechanisms of heavily B~+-ion-implanted type Ila diamond: effects of temperatures during the ion implantation and postannealing upon electrical conduction
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Electrical properties and conduction mechanisms of heavily B~+-ion-implanted type Ila diamond: effects of temperatures during the ion implantation and postannealing upon electrical conduction

机译：大型B〜+ION植入型ILA金刚石的电气性能和传导机制：在离子植入过程中温度的影响和电导电后的折磨

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摘要

We investigated the electrical properties and conduction mechanism of heavily B+-implanted type IIa diamond with respect to the implantation and postannealing temperatures. The B atoms were shallowly implanted with a flat concentration of 3.5 x 10(19) cm(-3) at RTand 900 degrees C; these samples were finally annealed at 1150 degrees C, 1300 degrees C and 1450 degrees C. We consequently confirmed p-type conductivity and typical ionization energy of acceptor B in a wide measured temperature range. The doping efficiency progressed remarkably well and attained 78% and the Hall mobility at RT was realized to be 108 cm(2)V(-1)s(-1) for the RT-implanted sample followed by annealing at 1300 degrees C. On the other hand, hot B+ implantation at 900 degrees C slightly degraded the electrical properties. The higher-temperature annealing at 1450 degrees C after B+ ion implantation promoted hopping conduction fairly well at a lower measured temperature range below around RT. We systematically investigated the hopping conduction mechanism based on theoretical relations. (C) 2020 The Japan Society of Applied Physics
机译：我们研究了关于植入和底片温度的重物B + -implanted型IIA金刚石的电性能和传导机制。在RTAXD 900℃下，B原子浅植入3.5×10（19）厘米（-3）的平坦浓度;这些样品最终在1150℃，1300℃和1450℃下退火。因此，在宽测量的温度范围内确认了受体B的p型导电性和典型电离能。掺杂效率显着良好，达到78％，并且在室温下，霍尔迁移率为108cm（2）v（-1）s（-1），用于在1300℃下退火。另一方面，热B +植入为900℃，略微降解电性能。在B +离子注入后1450℃的较高温退火促进在较低测量的温度范围内相当良好地跳跃导通。我们系统地研究了基于理论关系的跳跃传导机制。 （c）2020日本应用物理学会

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  • 来源
    《Japanese journal of applied physics》 |2020年第2期|021003.1-021003.8|共8页
  • 作者

    Seki Yuhei; Hoshino Yasushi; Nakata Jyoji;

  • 作者单位

    Kanagawa Univ Dept Math & Phys 2946 Tsuchiya Hiratsuka Kanagawa 2591293 Japan;

    Kanagawa Univ Dept Math & Phys 2946 Tsuchiya Hiratsuka Kanagawa 2591293 Japan;

    Kanagawa Univ Dept Math & Phys 2946 Tsuchiya Hiratsuka Kanagawa 2591293 Japan;

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