• 主题
高级搜索  >
历史搜索 清空历史
首页> 美国卫生研究院文献>Scientific Reports >Tuning the Electrical and Thermoelectric Properties of N Ion Implanted SrTiO3 Thin Films and Their Conduction Mechanisms
【2h】

Tuning the Electrical and Thermoelectric Properties of N Ion Implanted SrTiO3 Thin Films and Their Conduction Mechanisms

机译：氮离子注入SrTiO3薄膜的电和热电性质及其导电机理的调节

代理获取
本网站仅为用户提供外文OA文献查询和代理获取服务，本网站没有原文。下单后我们将采用程序或人工为您竭诚获取高质量的原文，但由于OA文献来源多样且变更频繁，仍可能出现获取不到、文献不完整或与标题不符等情况，如果获取不到我们将提供退款服务。请知悉。
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

The SrTiO3 thin films were fabricated by pulsed laser deposition. Subsequently ion implantation with 60 keV N ions at two different fluences 1 × 1016 and 5 × 1016 ions/cm2 and followed by annealing was carried out. Thin films were then characterized for electronic structure, morphology and transport properties. X-ray absorption spectroscopy reveals the local distortion of TiO6 octahedra and introduction of oxygen vacancies due to N implantation. The electrical and thermoelectric properties of these films were measured as a function of temperature to understand the conduction and scattering mechanisms. It is observed that the electrical conductivity and Seebeck coefficient (S) of these films are significantly enhanced for higher N ion fluence. The temperature dependent electrical resistivity has been analysed in the temperature range of 80–400 K, using various conduction mechanisms and fitted with band conduction, near neighbour hopping (NNH) and variable range hopping (VRH) models. It is revealed that the band conduction mechanism dominates at high temperature regime and in low temperature regime, there is a crossover between NNH and VRH. The S has been analysed using the relaxation time approximation model and dispersive transport mechanism in the temperature range of 300–400 K. Due to improvement in electrical conductivity and thermopower, the power factor is enhanced to 15 µWm−1 K−2 at 400 K at the higher ion fluence which is in the order of ten times higher as compared to the pristine films. This study suggests that ion beam can be used as an effective technique to selectively alter the electrical transport properties of oxide thermoelectric materials.
机译：通过脉冲激光沉积制备SrTiO3薄膜。随后以两种不同的注量1×10 16 和5×10 16 ions / cm 2 注入60 keV N离子进行离子注入，然后进行退火进行了。然后表征薄膜的电子结构，形态和传输性能。 X射线吸收光谱揭示了TiO6八面体的局部形变以及由于N注入引起的氧空位的引入。测量这些膜的电和热电性能随温度的变化，以了解其传导和散射机理。可以看出，对于更高的N离子通量，这些薄膜的电导率和塞贝克系数（S）显着提高。在80–400 K的温度范围内，已使用各种传导机制对温度依赖性电阻率进行了分析，并拟合了带导，近邻跳频（NNH）和可变跳频（VRH）模型。结果表明，在高温和低温条件下，带导机制占主导地位，NNH和VRH之间存在交叉。使用弛豫时间近似模型和300-400–K温度范围内的分散传输机制对S进行了分析，由于电导率和热功率的提高，功率因数提高到15 µWm -1 K −2 的质量是原始薄膜的10倍。这项研究表明，离子束可作为一种有效的技术来选择性地改变氧化物热电材料的电传输性质。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
代理获取

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号