Electrical characteristics of flexible amorphous indium-tin-gallium-zinc oxide thin-film transistors under repetitive mechanical stress

Lee Hosang; Cho Kyoungah; Kong Heesung; Lee Seungjun; Lim Junhyung; Kim Sangsig

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Electrical characteristics of flexible amorphous indium-tin-gallium-zinc oxide thin-film transistors under repetitive mechanical stress

机译：重复机械应力下柔性非晶铟 - 镓 - 氧化锌膜晶体管的电气特性

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In this study, we investigated the effect of repetitive mechanical stress on the electrical characteristics of amorphous indium-tin-gallium-zinc oxide (a-ITGZO) thin-film transistors (TFTs). The degradation of the electrical characteristics of an a-ITGZO TFT with a curvature radius of 2 mm is minimal even after the TFT undergoes bending 10(5) times. Our technology computer-aided design simulation reveals that the electrical characteristics degraded by the repeated bending cycles are due to the increase in the acceptor-like Gaussian states (N (GA)) related with the generation of oxygen interstitial defects.

机译：在这项研究中，我们研究了重复机械应力对非晶铟 - 锡镓 - 氧化锌（A-ITGZO）薄膜晶体管（TFT）的电气特性的影响。即使在TFT经过弯曲10（5）次之后，均匀的A-ITGZO TFT的曲率半径为2mm的A-ITGZO TFT的电特性也是最小的。我们的技术计算机辅助设计仿真显示，通过重复弯曲循环降低的电特性是由于与产生氧气间隙缺陷的产生有关的受体样高斯状态（N（GA））的增加。

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来源
《Japanese journal of applied physics》 |2021年第9期|090903.1-090903.5|共5页
作者
Lee Hosang; Cho Kyoungah; Kong Heesung; Lee Seungjun; Lim Junhyung; Kim Sangsig;
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Korea Univ Dept Elect Engn Anam Ro 145 Seoul 02841 South Korea;

Korea Univ Dept Elect Engn Anam Ro 145 Seoul 02841 South Korea;

Korea Univ Dept Elect Engn Anam Ro 145 Seoul 02841 South Korea;

Samsung Display Display Res Ctr Samseong Ro 1 Yongin 17113 Gyeonggi Do South Korea;

Samsung Display Display Res Ctr Samseong Ro 1 Yongin 17113 Gyeonggi Do South Korea;

Korea Univ Dept Elect Engn Anam Ro 145 Seoul 02841 South Korea;

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正文语种 eng
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关键词
a-ITGZO TFTs; CPI substrates; repetitive mechanical stress; TCAD simulation;

机译：A-ITGZO TFT;CPI基板;重复机械应力;TCAD仿真;

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1. A Study on the Electrical Properties of Atomic Layer Deposition Grown InOx on Flexible Substrates with Respect to N2O Plasma Treatment and the Associated Thin-Film Transistor Behavior under Repetitive Mechanical Stress [J] . Sheng Jiazhen, Park Jozeph, Choi Dong-won, ACS applied materials & interfaces . 2016,第45期

机译：N2O等离子体处理在柔性基板上生长InOx的原子层沉积的电学性质以及重复机械应力下相关的薄膜晶体管行为的研究
2. A Study on the Electrical Properties of Atomic Layer Deposition Grown InOx on Flexible Substrates with Respect to N2O Plasma Treatment and the Associated Thin-Film Transistor Behavior under Repetitive Mechanical Stress [J] . Sheng Jiazhen, Park Jozeph, Choi Dong-won, ACS applied materials & interfaces . 2016,第45期

机译：N2O等离子体处理在柔性基板上生长InOx的原子层沉积的电学性质以及重复机械应力下相关的薄膜晶体管行为的研究
3. Effect of Simultaneous Mechanical and Electrical Stress on the Electrical Performance of Flexible In-Ga-Zn-O Thin-Film Transistors [J] . Youngjin Seo, Hwan-Seok Jeong, Ha-Yun Jeong, Materials . 2019,第19期

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4. Investigation of Mechanical-Stress-Induced Electrical Failure of Oxide-Based Flexible Charge-Trap Memory Thin-Film Transistors Fabricated on Plastic Substrates [C] . Ji-Hee Yang, Gi-Heon Kim, Sung-Min Yoon International Workshop on Active-Matrix Flatpanel Displays and Devices . 2018

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5. Towards flexible full-color active matrix organic light-emitting displays: Dry dye printing for OLED integration and 280°C amorphous-silicon thin-film transistors on clear plastic substrates. [D] . Long, Ke. 2006

机译：迈向柔性全色有源矩阵有机发光显示器：用于透明OLED集成的干式染料印刷和在透明塑料基板上的280°C非晶硅薄膜晶体管。
6. Effect of Simultaneous Mechanical and Electrical Stress on the Electrical Performance of Flexible In-Ga-Zn-O Thin-Film Transistors [O] . Youngjin Seo, Hwan-Seok Jeong, Ha-Yun Jeong, 2019

机译：机电应力同时作用对柔性In-Ga-Zn-O薄膜晶体管电性能的影响
7. Effects of Active Layer Thickness on the Electrical Characteristics and Stability of High-Mobility Amorphous Indium–Gallium–Tin Oxide Thin-Film Transistors [O] . Dae-Hwan Kim, Hyun-Seok Cha, Hwan-Seok Jeong, 2021

机译：有源层厚度对高迁移率非晶铟 - 镓 - 氧化钛薄膜晶体管的电特性及稳定性的影响
8. Ultra-Flexible, Invisible Thin-Film Transistors Enabled by Amorphous Metal Oxide/Polymer Channel Layer Blends. [R] . Yu, X., Zeng, L., Zhou, N., 2015

机译：超柔性，不可见的薄膜晶体管，由非晶金属氧化物/聚合物沟道层混合物制成。

Electrical characteristics of flexible amorphous indium-tin-gallium-zinc oxide thin-film transistors under repetitive mechanical stress

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