Equivalent model for band-to-band tunneling simulation of direct-gap Ⅲ-Ⅴ semiconductor nanowires

Okada Jo; Hashimoto Futo; Mori Nobuya

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Equivalent model for band-to-band tunneling simulation of direct-gap Ⅲ-Ⅴ semiconductor nanowires

机译：直接间隙Ⅲ-Ⅳ半导体纳米线带状带隧道仿真的等效模型

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摘要

We have proposed an equivalent model for use in the simulation of tunnel devices. The equivalent model reproduces not only the real band-structure but also the complex band-structure of a target system. It has the features of adjustable spatial resolution and high spatial symmetry. We have tested it by calculating the band-to-band transmission functions and the maximum current of direct-gap III-V semiconductor nanowires, and confirmed that it correctly reproduces the transport characteristics of the target system. The equivalent model enables us to substantially reduce the Hamiltonian matrix size, leading to speed-up the quantum transport simulation of tunnel devices, such as tunnel field-effect transistors.

机译：我们提出了一种在隧道设备模拟中使用的等效模型。等效模型不仅再现实际带结构，还再现目标系统的复杂带结构。它具有可调节的空间分辨率和高空间对称性的特点。我们通过计算带对带传输功能和直接间隙III-V半导体纳米线的最大电流来测试它，并确认其正确地再现目标系统的传输特性。等效模型使我们能够大大降低哈密顿矩阵尺寸，从而加速隧道器件的量子传输模拟，例如隧道场效应晶体管。

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来源
《Japanese journal of applied physics》 |2021年第9期|091002.1-091002.6|共6页
作者
Okada Jo; Hashimoto Futo; Mori Nobuya;
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作者单位

Osaka Univ Grad Sch Engn Suita Osaka 5650871 Japan;

Osaka Univ Grad Sch Engn Suita Osaka 5650871 Japan;

Osaka Univ Grad Sch Engn Suita Osaka 5650871 Japan;

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正文语种 eng
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关键词
Non-Equilibrium Green's Function Method; Equivalent Model; Automatic Differentiation; Adaptive Momentum Estimation; Semiconductor Nanowire; Complex Band-Structure; Band-to-Band Tunnel;

机译：非均衡绿色的功能方法;等效模型;自动分化;自适应动量估计;半导体纳米线;复杂的带状结构;带对带隧道;

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专利

1. Physical properties and analytical models of band-to-band tunneling in low-bandgap semiconductors [J] . Shih Chun-Hsing, Dang Chien Nguyen Journal of Applied Physics . 2014,第4期

机译：低带隙半导体中带间隧穿的物理特性和分析模型
2. Physical properties and analytical models of band-to-band tunneling in low-bandgap semiconductors [J] . Chun-Hsing Shih, Nguyen Dang Chien Journal of Applied Physics . 2014,第4期

机译：低带隙半导体中带间隧穿的物理特性和分析模型
3. Multiscale model for phonon-assisted band-to-band tunneling in semiconductors [J] . Ajoy Arvind, Laux S. E., Murali Kota V. R. M., Journal of Applied Physics . 2013,第6期

机译：半导体中声子辅助能带间隧穿的多尺度模型
4. Correction to the Schenk Model of Band-to-Band Tunneling in Silicon Applied to the Simulation of Nanowire Tunneling Transistors [C] . Heigl A., Schenk A., Wachutka G. Computational Electronics, 2009. IWCE '09 . 2009

机译：硅中带间隧穿Schenk模型的校正在纳米线隧穿晶体管仿真中的应用
5. Band-to-Band Tunnel Transistor Design and Modeling for Low Power Applications. [D] . Jeon, Kanghoon. 2012

机译：低功耗应用的带间隧道晶体管设计和建模。
6. Ultrafast all-optical tuning of direct-gap semiconductor metasurfaces [O] . Maxim R. Shcherbakov, Sheng Liu, Varvara V. Zubyuk, -1

机译：直缝半导体超表面的超快全光调谐
7. Multiscale model for phonon-assisted band-to-band tunneling in semiconductors [O] . Ajoy, Arvind, Laux, S. E., Murali, Kota V. R. M., 2014

机译：声学辅助带间隧穿的多尺度模型半导体

Equivalent model for band-to-band tunneling simulation of direct-gap Ⅲ-Ⅴ semiconductor nanowires

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