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首页> 外文期刊>Journal of Applied Physics >Study of barrier height and trap centers of Au-Hg_3In_2Te_6 Schottky contacts by current-voltage (Ⅰ-Ⅴ) characteristics and deep level transient spectroscopy
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Study of barrier height and trap centers of Au-Hg_3In_2Te_6 Schottky contacts by current-voltage (Ⅰ-Ⅴ) characteristics and deep level transient spectroscopy

机译：通过电流-电压（Ⅰ-Ⅴ）特性和深能级瞬态光谱研究Au / n-Hg_3In_2Te_6肖特基接触的势垒高度和陷阱中心

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摘要

The temperature-dependent electrical characteristics of the Au-Hg_3In_2Te_6 Schottky contact have been studied at the temperature range of 140K-315K. Based on the thermionic emission theory, the ideality factor and Schottky barrier height were calculated to decrease and increase from 3.18 to 1.88 and 0.39eV to 0.5eV, respectively, when the temperature rose from 140K to 315K. This behavior was interpreted by the lateral inhomogeneities of Schottky barrier height at the interface of Au-Hg_3In_2Te_6 contact, which was shown by the plot of zero-bias barrier heights Φ_(bo) versus q/2kT. Meanwhile, it was found that the Schottky barrier height with a Gaussian distribution was 0.67 eV and the standard deviation σ_0 was about 0.092 eV, indicating that the uneven distribution of barrier height at the interface region. In addition, the mean value of Φ_(b0) and modified Richardson constant was determined to be 0.723 eV and 62.8 A/cm~2K~2 from the slope and intercept of the ln(I_o/T~2)-(qσ_0~2/2k~2T~2) versus q/kT plot, respectively. Finally, two electron trap centers were observed at the interface of Au-Hg_3In_2Te_6 Schottky contact by means of deep level transient spectroscopy.
机译：在140K-315K的温度范围内研究了Au / n-Hg_3In_2Te_6肖特基接触的随温度变化的电学特性。根据热电子发射理论，当温度从140K升高到315K时，理想因子和肖特基势垒高度分别从3.18降低到1.88，从0.39eV降低到0.5eV。这种行为可以通过Au / n-Hg_3In_2Te_6接触界面处肖特基势垒高度的横向不均匀性来解释，这通过零偏势垒高度Φ_（bo）与q / 2kT的关系图可以看出。同时，发现具有高斯分布的肖特基势垒高度为0.67eV，标准偏差σ_0为约0.092eV，表明在界面区域势垒高度的不均匀分布。另外，从ln（I_o / T〜2）-（qσ_0〜2）的斜率和截距确定Φ_（b0）和修正的Richardson常数的平均值为0.723 eV和62.8 A / cm〜2K〜2 / 2k〜2T〜2）与q / kT的关系图。最后，通过深能级瞬变光谱法在Au / n-Hg_3In_2Te_6肖特基接触的界面处观察到两个电子陷阱中心。

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  • 来源
    《Journal of Applied Physics》 |2015年第8期|085704.1-085704.6|共6页
  • 作者

    Yapeng Li; Li Fu; Jie Sun; Xiaozhen Wang;

  • 作者单位

    State Key Laboratory of Solidification Processing, School of Materials Science and Engineering, Northwestern Polytechnical University, Xi'an 710072, China;

    State Key Laboratory of Solidification Processing, School of Materials Science and Engineering, Northwestern Polytechnical University, Xi'an 710072, China;

    State Key Laboratory of Solidification Processing, School of Materials Science and Engineering, Northwestern Polytechnical University, Xi'an 710072, China;

    State Key Laboratory of Solidification Processing, School of Materials Science and Engineering, Northwestern Polytechnical University, Xi'an 710072, China;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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  • 正文语种 eng
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