• 主题
高级搜索  >
历史搜索 清空历史
首页> 外文期刊>Journal of Applied Physics >Synchrotron-based measurement of the impact of thermal cycling on the evolution of stresses in Cu through-silicon vias
【24h】

Synchrotron-based measurement of the impact of thermal cycling on the evolution of stresses in Cu through-silicon vias

机译：基于同步加速器的热循环对贯穿硅通孔的应力演变的影响的测量

获取原文
获取原文并翻译 | 示例
           
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

One of the main causes of failure during the lifetime of microelectronics devices is their exposure to fluctuating temperatures. In this work, synchrotron-based X-ray micro-diffraction is used to study the evolution of stresses in copper through-silicon via (TSV) interconnects, "as-received" and after 1000 thermal cycles. For both test conditions, significant fluctuations in the measured normal and shear stresses with depth are attributed to variations in the Cu grain orientation. Nevertheless, the mean hydrostatic stresses in the "as-received" Cu TSV were very low, at (16 ± 44) MPa, most likely due to room temperature stress relaxation. In contrast, the mean hydrostatic stresses along the entire length of the Cu TSV that had undergone 1000 thermal cycles (123 ± 37) MPa were found to be eight times greater, which was attributed to increased strain-hardening. The evolution in stresses with thermal cycling is a clear indication that the impact of Cu TSVs on front-end-of-line (FEOL) device performance will change through the lifetime of the 3D stacked dies, and ought to be accounted for during FEOL keep-out-zone design rules development.
机译：在微电子设备的整个寿命期间，导致故障的主要原因之一是其暴露于波动的温度。在这项工作中，基于同步加速器的X射线微衍射被用于研究铜硅通孔（TSV）互连中的应力演化，按“原样”以及在1000个热循环之后。对于这两种测试条件，所测得的法向应力和剪切应力随深度的明显波动都归因于Cu晶粒取向的变化。然而，“按原样” Cu TSV中的平均静水压力非常低，为（16±44）MPa，最有可能是由于室温应力松弛引起的。相反，发现经历了1000次热循环（123±37）MPa的Cu TSV整个长度的平均静水压力要大八倍，这归因于应变硬化。热循环应力的变化清楚地表明，Cu TSV对前端（FEOL）器件性能的影响将在3D堆叠管芯的整个寿命周期内发生变化，因此应在FEOL保持期间加以考虑区域外设计规则开发。

著录项

  • 来源
    《Journal of Applied Physics》 |2014年第24期|243509.1-243509.7|共7页
  • 作者

    Chukwudi Okoro; Lyle E. Levine; Ruqing Xu; Klaus Hummler; Yaw Obeng;

  • 作者单位

    Semiconductor and Dimensional Metrology Division, National Institute of Standards and Technology (NIST), Gaithersburg, Maryland 20899, USA;

    Material Science and Engineering Division, National Institute of Standards and Technology (NIST), Gaithersburg, Maryland 20899, USA;

    Advanced Photon Source, Argonne National Laboratory, Argonne, Illinois 60439-4800, USA;

    SEMATECH, 257 Fuller Road, Albany, New York 12203, USA;

    Semiconductor and Dimensional Metrology Division, National Institute of Standards and Technology (NIST), Gaithersburg, Maryland 20899, USA;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号