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首页> 外文期刊>Electron Devices, IEEE Transactions on >Nondestructive Measurement of the Residual Stresses in Copper Through-Silicon Vias Using Synchrotron-Based Microbeam X-Ray Diffraction
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Nondestructive Measurement of the Residual Stresses in Copper Through-Silicon Vias Using Synchrotron-Based Microbeam X-Ray Diffraction

机译：使用基于同步加速器的微束X射线衍射对硅通孔中的铜残余应力进行无损测量

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摘要

In this paper, we report a new method for achieving depth resolved determination of the full stress tensor in buried Cu through-silicon vias (TSVs), using a synchrotron-based X-ray microdiffraction technique. Two adjacent Cu TSVs were analyzed; one capped with SiO2 (0.17 (mu ) m) and the other without. The uncapped Cu TSV was found to have higher stresses with an average hydrostatic stress value of (145pm 37) MPa, as compared with the capped Cu TSV, which had a value of (89pm 28) MPa. Finite element-based parametric analyses of the effect of cap thickness on TSV stress were also performed. The differences in the stresses in the adjacent Cu TSVs were attributed to their microstructural differences and not to the presence of a cap layer. Based on the experimentally determined stresses, the stresses in the surrounding Si for both Cu TSVs were calculated and the FinFET keep-out-zone (KOZ) from the Cu TSV was estimated. The FinFET KOZ is influenced by the microstructural variations in their neighboring Cu TSVs, thus, it should be accounted for in KOZ design rules.
机译：在本文中，我们报告了一种新的方法，该方法使用基于同步加速器的X射线微衍射技术来实现对埋入式铜直通硅通孔（TSV）中的全应力张量进行深度分辨确定的方法。分析了两个相邻的Cu TSV。一个用SiO 2 （0.17（μm）m）覆盖，另一个不覆盖。发现与封端的Cu TSV的值为（89pm 28）MPa相比，未封端的Cu TSV的应力更高，平均静水应力值为（145pm 37）MPa。还对盖厚度对TSV应力的影响进行了基于有限元的参数分析。相邻的Cu TSV中的应力差异归因于它们的微观结构差异，而不是归因于覆盖层的存在。基于实验确定的应力，计算了两个Cu TSV的周围Si中的应力，并估算了来自Cu TSV的FinFET保留区（KOZ）。 FinFET KOZ受其相邻的Cu TSV的微结构变化的影响，因此，应在KOZ设计规则中予以考虑。

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