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In-situ X-ray mu Laue diffraction study of copper through-silicon vias

机译：铜硅通孔的原位X射线mu Laue衍射研究

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摘要

In this work, we developed an original in-situ strain investigation of a Cu through silicon vias (TSVs) sample using X-ray mu Laue diffraction mapping. We perform an in-situ investigation of a Cu TSV sample. Three different stages were analysed: (i) at room temperature, (ii) during an annealing at 400 degrees C and, (iii) at room temperature again after the annealing. In combination with analytical and Finite Element Method analysis, the Cu extrusion and grain growth are identified and quantified, and, their effects on the measured Si strain fields are discussed. (C) 2015 Elsevier Ltd. All rights reserved.
机译：在这项工作中，我们使用X射线mu Laue衍射图谱开发了通过硅通孔（TSV）样品对Cu进行的原始原位应变研究。我们对Cu TSV样品进行了现场调查。分析了三个不同阶段：（i）在室温下，（ii）在400摄氏度的退火过程中，和（iii）在退火后再次在室温下。结合分析和有限元方法分析，确定并量化了铜的挤压和晶粒长大，并讨论了它们对测得的Si应变场的影响。 （C）2015 Elsevier Ltd.保留所有权利。

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  • 来源
    《Microelectronics & Reliability》 |2016年第1期|78-84|共7页
  • 作者

    Sanchez Dario Ferreira; Reboh Shay; Weleguela Monica Larissa Djomeni; Micha Jean-Sebastien; Robach Odile; Mourier Thierry; Gergaud Patrice; Bleuet Pierre;

  • 作者单位

    Univ Grenoble Alpes, F-38000 Grenoble, France|CEA Grenoble, LETI, MINATEC Campus, F-38054 Grenoble, France;

    Univ Grenoble Alpes, F-38000 Grenoble, France|CEA Grenoble, LETI, MINATEC Campus, F-38054 Grenoble, France;

    Univ Grenoble Alpes, F-38000 Grenoble, France|CEA Grenoble, LETI, MINATEC Campus, F-38054 Grenoble, France;

    CEA Grenoble, LETI, MINATEC Campus, F-38054 Grenoble, France|CEA Grenoble, INAC, 17 Rue Martyrs, F-38054 Grenoble, France|CNRS, SPrAM, 17 Rue Martyrs, F-38054 Grenoble, France|ESRF, CRG IF, BM32, BP 220, F-38043 Grenoble 9, France;

    CEA Grenoble, LETI, MINATEC Campus, F-38054 Grenoble, France|CEA Grenoble, INAC, 17 Rue Martyrs, F-38054 Grenoble, France|CNRS, SPrAM, 17 Rue Martyrs, F-38054 Grenoble, France|ESRF, CRG IF, BM32, BP 220, F-38043 Grenoble 9, France;

    Univ Grenoble Alpes, F-38000 Grenoble, France|CEA Grenoble, LETI, MINATEC Campus, F-38054 Grenoble, France;

    Univ Grenoble Alpes, F-38000 Grenoble, France|CEA Grenoble, LETI, MINATEC Campus, F-38054 Grenoble, France;

    Univ Grenoble Alpes, F-38000 Grenoble, France|CEA Grenoble, LETI, MINATEC Campus, F-38054 Grenoble, France;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    Through silicon vias (TSVs); Microelectronics reliability; Copper extrusion; Laue micro-diffraction;

    机译：硅通孔（TSV）;微电子可靠性;铜挤压;劳厄微衍射;

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