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Double Gaussian distribution of barrier height observed in densely packed GaN nanorods over Si (111) heterostructures

机译:在Si(111)异质结构上密集堆积的GaN纳米棒中观察到的势垒高度的双高斯分布

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摘要

GaN nanorods were grown by plasma assisted molecular beam epitaxy on intrinsic Si (111) substrates which were characterized by powder X-ray diffraction, field emission scanning electron microscopy, and photoluminescence. The current-voltage characteristics of the GaN nanorods on Si (111) heterojunction were obtained from 138 to 493K which showed the inverted rectification behavior. The Ⅰ-Ⅴ characteristics were analyzed in terms of thermionic emission model. The temperature variation of the apparent barrier height and ideality factor along with the non-linearity of the activation energy plot indicated the presence of lateral inhomogeneities in the barrier height. The observed two temperature regimes in Richardson's plot could be well explained by assuming two separate Gaussian distribution of the barrier heights.
机译:通过等离子体辅助分子束外延在本征Si(111)衬底上生长GaN纳米棒,该衬底通过粉末X射线衍射,场发射扫描电子显微镜和光致发光进行表征。在138K到493K之间获得了Si(111)异质结上的GaN纳米棒的电流-电压特性,显示出反向的整流行为。根据热电子发射模型分析了Ⅰ-Ⅴ特性。表观势垒高度和理想因子的温度变化以及活化能图的非线性表明势垒高度中存在横向不均匀性。通过假设势垒高度的两个单独的高斯分布,可以很好地解释在理查森图中观察到的两个温度状态。

著录项

  • 来源
    《Journal of Applied Physics》 |2014年第23期|234508.1-234508.7|共7页
  • 作者单位

    Materials Research Centre, Indian Institute of Science, Bangalore 560012, India;

    Materials Research Centre, Indian Institute of Science, Bangalore 560012, India;

    Materials Research Centre, Indian Institute of Science, Bangalore 560012, India;

    Materials Research Centre, Indian Institute of Science, Bangalore 560012, India, Central Research Laboratory, Bharat Electronics, Bangalore 560013, India;

    Materials Research Centre, Indian Institute of Science, Bangalore 560012, India;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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  • 正文语种 eng
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