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首页> 外文期刊>Journal of Applied Physics >Guided photoluminescence study of Nd-doped silicon rich silicon oxide and silicon rich silicon nitride waveguides
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Guided photoluminescence study of Nd-doped silicon rich silicon oxide and silicon rich silicon nitride waveguides

机译：Nd掺杂富硅氧化硅和富硅氮化硅波导的引导光致发光研究

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摘要

Planar waveguides made of Nd~(3+)-doped silicon rich silicon oxide (SRSO) and silicon rich silicon nitride (SRSN) have been fabricated by reactive magnetron sputtering and characterized with special emphasis on the comparison of the guided photoluminescence (PL) properties of these two matrices. Guided fluorescence excited by top surface pumping at 488 nm on planar waveguides was measured as a function of the distance between the excitation area and the output of the waveguide, as well as a function of the pump power density. The PL intensity increased linearly with pump power without any saturation even at high power. The linear intensity increase of the Nd~(3+) guided PL under a non-resonant excitation (488 nm) confirms the efficient coupling between either Si-np and rare-earth ions for SRSO or radiative defects and rare earth ions for SRSN. The guided fluorescences at 945 and 1100 nm were observed until 4 mm and 8 mm of the output of the waveguide for Nd~(3+) doped SRSO and SRSN waveguides, respectively. The guided fluorescence decays of Nd~(3+)-doped-SRSO and -SRSN planar waveguides have been measured and found equal to 97 μs ±7 and 5 μs ± 2, respectively. These results show notably that the Nd~(3+)doped silicon rich silicon oxide is a very promising candidate on the way to achieve a laser cavity at 1.06 μm.
机译：通过反应磁控溅射制备了由Nd〜（3+）掺杂的富硅氧化硅（SRSO）和富硅氮化硅（SRSN）制成的平面波导，其特征是着重于引导光致发光（PL）特性的比较这两个矩阵中的一个测量了在平面波导上由顶表面泵浦在488 nm处激发的引导荧光，该荧光是激发面积与波导输出之间的距离以及泵浦功率密度的函数。 PL强度随泵浦功率线性增加，即使在高功率下也不会出现饱和。 Nd〜（3+）引导的PL在非共振激发（488 nm）下的线性强度增加证实了SRSO的Si-np和稀土离子或SRSN的辐射缺陷和稀土离子之间的有效耦合。观察到在945和1100 nm处的引导荧光，直到分别掺杂Nd〜（3+）的SRSO和SRSN波导的波导输出分别为4 mm和8 mm。已测量了掺Nd〜（3+）的SRSO和-SRSN平面波导的引导荧光衰减，发现分别等于97μs±7和5μs±2。这些结果显着表明，Nd〜（3+）掺杂的富硅氧化硅是实现1.06μm激光腔的非常有前途的候选材料。

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  • 来源
    《Journal of Applied Physics》 |2013年第1期|014906.1-014906.6|共6页
  • 作者

    Parastesh Pirasteh; Joeel Charrier; Yannick Dumeige; Jean-Louis Doualan; Patrice Camy; Olivier Debieu; Chuan-hui Liang; Larysa Khomenkova; Jonathan Lemaitre; Yann G. Boucher; Fabrice Gourbilleau;

  • 作者单位

    Universite europeenne de Bretagne, CNRS FOTON, UMR 6082, Enssat CS 80518, F-22305 Lannion Cedex,France;

    Universite europeenne de Bretagne, CNRS FOTON, UMR 6082, Enssat CS 80518, F-22305 Lannion Cedex,France;

    Universite europeenne de Bretagne, CNRS FOTON, UMR 6082, Enssat CS 80518, F-22305 Lannion Cedex,France;

    CIMAP, UMR CNRS/CEA/ENSICAEN/UCBN, 6 Bld Marechal Juin, F-14050 CAEN Cedex, France;

    CIMAP, UMR CNRS/CEA/ENSICAEN/UCBN, 6 Bld Marechal Juin, F-14050 CAEN Cedex, France;

    CIMAP, UMR CNRS/CEA/ENSICAEN/UCBN, 6 Bld Marechal Juin, F-14050 CAEN Cedex, France;

    CIMAP, UMR CNRS/CEA/ENSICAEN/UCBN, 6 Bld Marechal Juin, F-14050 CAEN Cedex, France;

    CIMAP, UMR CNRS/CEA/ENSICAEN/UCBN, 6 Bld Marechal Juin, F-14050 CAEN Cedex, France;

    Universite europeenne de Bretagne, CNRS FOTON, UMR 6082, Enssat CS 80518, F-22305 Lannion Cedex,France;

    Universite europeenne de Bretagne, CNRS FOTON, UMR 6082, Enssat CS 80518, F-22305 Lannion Cedex,France;

    CIMAP, UMR CNRS/CEA/ENSICAEN/UCBN, 6 Bld Marechal Juin, F-14050 CAEN Cedex, France;

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