A high-energy electron scattering study of the electronic structure and elemental composition of O-implanted Ta films used for the fabrication of memristor devices

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• 来源
  《Journal of Applied Physics》 |2013年第7期|073508.1-073508.7|共7页
• 作者

  M. Vos; P. L. Grande; S. K. Nandi; D. K. Venkatachalam; R. G. Elliman;

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• 作者单位

  Atomic and Molecular Physics Laboratories, Research School of Physics and Engineering, The Australian National University, Canberra, ACT 0200, Australia;

  Department of Electronic Materials Engineering, Research School of Physics and Engineering, The Australian National University, Canberra, ACT 0200, Australia,Instituto de Fisica da Universidade Federal do Rio Grande do Sul, Avenida Bento Goncalves 9500, 91501-970, Porto Alegre, RS, Brazil;

  Department of Electronic Materials Engineering, Research School of Physics and Engineering, The Australian National University, Canberra, ACT 0200, Australia,Research School of Astronomy and Astrophysics, The Australian National University, Canberra, ACT 261I, Australia,Department of Physics, University of Chittagong, Chittagong, Chittagong - 4331, Bangladesh;

  Department of Electronic Materials Engineering, Research School of Physics and Engineering, The Australian National University, Canberra, ACT 0200, Australia;

  Department of Electronic Materials Engineering, Research School of Physics and Engineering, The Australian National University, Canberra, ACT 0200, Australia;

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• 原文格式 PDF
• 正文语种 eng
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