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首页> 外文期刊>Journal of Applied Physics >Time-resolved photoluminescence, positron annihilation, and Al_0.23Ga_0.77N/ GaN heterostructure growth studies on low defect density polar and nonpolar freestanding GaN substrates grown by hydride vapor phase epitaxy
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Time-resolved photoluminescence, positron annihilation, and Al_0.23Ga_0.77N/ GaN heterostructure growth studies on low defect density polar and nonpolar freestanding GaN substrates grown by hydride vapor phase epitaxy

机译：在氢化物气相外延生长的低缺陷密度极性和非极性独立式GaN衬底上的时间分辨光致发光，正电子ni灭和Al_0.23Ga_0.77N / GaN异质结构生长研究

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摘要

Time-resolved photoluminescence (TRPL) and positron annihilation measurements, as well as Alo.23Gao.77N/GaN heterostructure growth by metalorganic vapor phase epitaxy were carried out on very low defect density, polar c-plane and nonpolar m-plane freestanding GaN (FS-GaN) substrates grown by hydride vapor phase epitaxy. Room-temperature photoluminescence (PL) lifetime for the near-band-edge (NBE) excitonic emission of the FS-GaN substrates increases with increasing positron diffusion length (L_+); i.e., decreasing gross concentration of charged and neutral point defects and complexes. The best undoped c-plane FS-GaN exhibits record-long L_+ being 116nm. The fast component of the PL lifetime for its NBE emission increases with temperature rise up to 100 K and levels off at approximately 1.1 ns. The result implies a saturation in thermal activation of nonradiative recombination centers. The surface and interface roughnesses for a Si-doped Al_0.23Ga_0.77N/GaN/Al_0.82Ga_0.82N/GaN heterostructure are improved by the use of FS-GaN substrates, in comparison with the structure fabricated on a standard GaN template. The emission signals related to the recombination of a two-dimensional electron gas and excited holes are recognized for an Alo.23Gao.77N/GaN single heterostructure grown on the c-plane FS-GaN substrate.
机译：在非常低的缺陷密度，极性c面和非极性m面独立式GaN（GaN）上进行了时间分辨的光致发光（TRPL）和正电子hil灭测量以及通过金属有机气相外延生长Alo.23Gao.77N / GaN异质结构氢化物气相外延生长的FS-GaN）衬底。 FS-GaN衬底的近带边缘（NBE）激子发射的室温光致发光（PL）寿命随着正电子扩散长度（L_ +）的增加而增加；即降低带电和中性点缺陷及络合物的总浓度。最好的未掺杂c面FS-GaN表现出记录长的L_ +为116nm。 NBE发射的PL寿命的快速组成部分随温度升高至100 K而增加，并稳定在约1.1 ns。结果暗示了非辐射复合中心的热活化饱和。与在标准GaN模板上制造的结构相比，通过使用FS-GaN衬底可以改善掺Si的Al_0.23Ga_0.77N / GaN / Al_0.82Ga_0.82N / GaN异质结构的表面和界面粗糙度。对于在c平面FS-GaN衬底上生长的Alo.23Gao.77N / GaN单一异质结构，可以识别与二维电子气和激发空穴的复合有关的发射信号。

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  • 来源
    《Journal of Applied Physics》 |2012年第10期|p.103518.1-103518.11|共11页
  • 作者

    S. F. Chichibu; K. Hazu; Y. Ishikawa; M. Tashiro; H. Namita; S. Nagao; K. Fujito; A. Uedono;

  • 作者单位

    Institute of Multidisciplinary Research for Advanced Materials, Tohoku University, 2-1-1 Katahira, Aoba, Sendai-980-8577, Japan;

    Institute of Multidisciplinary Research for Advanced Materials, Tohoku University, 2-1-1 Katahira, Aoba, Sendai-980-8577, Japan;

    Institute of Multidisciplinary Research for Advanced Materials, Tohoku University, 2-1-1 Katahira, Aoba, Sendai-980-8577, Japan;

    Institute of Multidisciplinary Research for Advanced Materials, Tohoku University, 2-1-1 Katahira, Aoba, Sendai-980-8577, Japan;

    Mitsubishi Chemical Corporation, Optoelectronics Department, 1000 Higashi-mamiana, Ushiku 300-1295, Japan;

    Mitsubishi Chemical Corporation, Optoelectronics Department, 1000 Higashi-mamiana, Ushiku 300-1295, Japan;

    Mitsubishi Chemical Corporation, Optoelectronics Department, 1000 Higashi-mamiana, Ushiku 300-1295, Japan;

    Institute of Applied Physics, University ofTsukuba, 1-1-1 Tennodai, Tsukuba 305-8573, Japan;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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