首页> 外国专利> STACKING FAULT-FREE SEMIPOLAR AND NONPOLAR GAN GROWN ON FOREIGN SUBSTRATES BY ELIMINATING THE NITROGEN POLAR FACETS DURING THE GROWTH

STACKING FAULT-FREE SEMIPOLAR AND NONPOLAR GAN GROWN ON FOREIGN SUBSTRATES BY ELIMINATING THE NITROGEN POLAR FACETS DURING THE GROWTH

机译：通过消除生长过程中的氮极极性面，在外国基质上堆积无缺陷的半球形和非极性gan

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摘要

Methods and structures for forming epitaxial layers of Ill-nitride materials on patterned foreign substrates with low stacking fault densities are described. Semipolar and nonpolar orientations of GaN that are essentially free from stacking faults may be grown from crystal-growth facets of a patterned substrate. Etching can be used to remove stacking faults if present. Crystal growth with an impurity can eliminate crystal growth from a facet that is responsible for stacking fault formation and permit substantially stacking-fault-free growth of the Ill-nitride material.

机译：描述了在具有低堆垛层错密度的图案化异物衬底上形成III族氮化物材料的外延层的方法和结构。基本上没有堆叠缺陷的GaN的半极性和非极性取向可能会从图案化衬底的晶体生长面生长出来。蚀刻可用于消除堆叠故障（如果存在）。具有杂质的晶体生长可以消除导致堆叠缺陷形成的小面的晶体生长，并允许III族氮化物材料的基本上无堆叠缺陷的生长。

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公开/公告号US2019228969A1

专利类型
公开/公告日2019-07-25

原文格式PDF
申请/专利权人 YALE UNIVERSITY;
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申请/专利号US201716324979
发明设计人 JUNG HAN;JIE SONG;
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申请日2017-08-11
分类号H01L21/02;H01L29/20;H01L29/207;H01L29/32;H01L29/36;H01L33;H01L33/02;H01L33/12;H01L33/20;H01L33/32;H01L21/306;H01L29/04;C30B25/18;C30B29/40;C30B33/10;C23C16/30;C23C16/56;C30B25/04;C23C16/04;
国家 US
入库时间 2022-08-21 12:09:18

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