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首页> 外文期刊>Journal of Applied Physics >Residual compressive stress induced infrared-absorption frequency shift of hexagonal boron nitride in cubic boron nitride films prepared by plasma-enhanced chemical vapor deposition
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Residual compressive stress induced infrared-absorption frequency shift of hexagonal boron nitride in cubic boron nitride films prepared by plasma-enhanced chemical vapor deposition

机译：等离子体压缩化学气相沉积制备立方晶氮化硼薄膜中残余压缩应力引起的六方氮化硼红外吸收频移

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摘要

The effects of compressive stress on the TO phonon frequencies of hexagonal boron nitride (hBN) in cubic BN (cBN) films were investigated using infrared absorption spectroscopy, showing that the B-N stretching vibration of hBN at 1380 cm~(-1) shifted to high wavenumbers under biaxial compressive stress with the rate 2.65 cm~(-1) per GPa, while the B-N-B bending vibration near 780cm~(-1) shifted to low wavenumbers with the rate -3.45cm~(-1)/GPa. The density functional perturbation theoretical calculation was carried out to check the above phonon frequencies under stress for two typical orientations of hBN crystallite. The results are shown to be in fair agreement with the experimental data. Our results suggest that the residual compressive stress accumulated in cBN films can be evaluated from the IR peak position near 780 cm~(-1).
机译：利用红外吸收光谱研究了压缩应力对立方氮化硼（cBN）薄膜中六方氮化硼（hBN）的TO声子频率的影响，表明hBN在1380 cm〜（-1）处的BN拉伸振动向高位移。双轴压缩应力下的波数为2.65 cm〜（-1）/ GPa，而在780cm〜（-1）附近的BNB弯曲振动以-3.45cm〜（-1）/ GPa的速率向低波数移动。进行了密度泛函微扰理论计算，以检验上述应力声子频率对于hBN晶体的两个典型取向。结果表明与实验数据完全吻合。我们的结果表明，可以从780 cm〜（-1）附近的IR峰值位置评估cBN膜中累积的残余压应力。

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  • 来源
    《Journal of Applied Physics》 |2012年第5期|p.053502.1-053502.5|共5页
  • 作者

    Yong Liu; Panpan Jin; Aili Chen; Hangsheng Yang; Yabo Xu;

  • 作者单位

    State Key Laboratory of Silicon Materials, Department of Materials Science and Engineering,Zhejiang University, Zheda Road 38, Hangzhou 310027, China;

    State Key Laboratory of Silicon Materials, Department of Materials Science and Engineering,Zhejiang University, Zheda Road 38, Hangzhou 310027, China;

    State Key Laboratory of Silicon Materials, Department of Materials Science and Engineering,Zhejiang University, Zheda Road 38, Hangzhou 310027, China;

    State Key Laboratory of Silicon Materials, Department of Materials Science and Engineering,Zhejiang University, Zheda Road 38, Hangzhou 310027, China;

    Department of Physics, Zhejiang University, Zheda Road 38, Hangzhou 310027, China;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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